ST1004SRG MOSFET. Datasheet pdf. Equivalent
Type Designator: ST1004SRG
Marking Code: 104YA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 9 nC
trⓘ - Rise Time: 21.5 nS
Cossⓘ - Output Capacitance: 29 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.31 Ohm
Package: SOT-23
ST1004SRG Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ST1004SRG Datasheet (PDF)
st1004srg.pdf
ST1004SRG N Channel Enhancement Mode MOSFET 2.0A DESCRIPTION ST1004SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The process is especially to improve the overall efficiency of DC/DC conventional switching PWM controllers. It has been optimized for low gate charge, low R and fast switchi
bst100.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBST100P-channel enhancement modevertical D-MOS transistorApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationP-channel enhancement mode verticalBST100D-MOS transistorDESCRIPTION QUICK REFERENCE DATAP-channel vertical D-MOS transistorDrain-source voltage -VDS max. 60 VT
st1005srg.pdf
ST1005SRG P Channel Enhancement Mode MOSFET -0.8A DESCRIPTION ST1005SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone an
st1002.pdf
ST1002 N Channel Enhancement Mode MOSFET 3.0A DESCRIPTION The ST1002 is the N-Channel logic enhancement mode power field effect transistor is produce using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These device are particularly suited for low voltage application such as cellular phone and notebo
jst100n30t2.pdf
JST100N30T2 30V,100A N-channel MOSFETFeatures Application 30V,100A Load Switch R =3.1m (Typ.) @ V =10V PWM ApplicationDS(ON) GS R =4.5m (Typ.) @ V =4.5VDS(ON) GS Advanced Trench Technology Provide Excellent R and Low Gate ChargeDS(ON)Package JST100N30T2 Absolute Maximum Ratings (T =25 unless otherwise specified)CSymbol Parameter
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: WM10N35M2
