ST12N10D Specs and Replacement

Type Designator: ST12N10D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 79 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 29 nS

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: TO-252

ST12N10D substitution

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ST12N10D datasheet

 ..1. Size:572K  stansontech
 st12n10d.pdf pdf_icon

ST12N10D

ST12N10D N Channel Enhancement Mode MOSFET 12.0A DESCRIPTION ST12N10D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The ST12N10D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been... See More ⇒

 ..2. Size:905K  cn vbsemi
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ST12N10D

ST12N10D www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS... See More ⇒

Detailed specifications: SS07N70, SSD80N03, SSFM2506L, SSFM2508, ST1002, ST1004SRG, ST1005SRG, ST10E4, IRFB4110, ST13P10, ST2300, ST2300SRG, ST2301A, ST2302, ST2303SRG, ST2304, ST2304SRG

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