ST2303SRG PDF and Equivalents Search

 ..1. Size:200K  stansontech
 st2303srg.pdf

ST2303SRG P Channel Enhancement Mode MOSFET -2.6A DESCRIPTION ST2303SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone a... See More ⇒

 8.1. Size:1367K  winsok
 wst2303a.pdf

WST2303A P-Ch MOSFET General Description Product Summery The WST2303A is the highest performance BVDSS RDSON ID trench P-ch MOSFET with extreme high cell density , which provide excellent RDSON and -20V 144m -2.5A gate charge for most of the small power switching and load switch applications. Applications The WST2303A meet the RoHS and Green Product requirement with full ... See More ⇒

 8.2. Size:1058K  winsok
 wst2303.pdf

WST2303 P-Ch MOSFET General Description Product Summery The WST2303 is the highest performance trench BVDSS RDSON ID P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -20V 65m -3.8A for most of the small power switching and load switch applications. Applications The WST2303 meet the RoHS and Green High Frequency Point-of-Load ... See More ⇒

 9.1. Size:212K  stansontech
 st2305.pdf

ST2305 P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST2305 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and not... See More ⇒

 9.2. Size:383K  stansontech
 st2300.pdf

ST2300 N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION The ST2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and noteboo... See More ⇒

 9.3. Size:188K  stansontech
 st2302.pdf

ST2302 N Channel Enhancement Mode MOSFET 3.6A DESCRIPTION ST2302 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and noteboo... See More ⇒

 9.4. Size:161K  stansontech
 st2305a.pdf

ST2305A P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST2305A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and no... See More ⇒

 9.5. Size:753K  stansontech
 st2304srg.pdf

ST2304SRG N Channel Enhancement Mode MOSFET 3.2A DESCRIPTION ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone an... See More ⇒

 9.6. Size:897K  stansontech
 st2304.pdf

ST2304 N Channel Enhancement Mode MOSFET 3.2A DESCRIPTION ST2304 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and note... See More ⇒

 9.7. Size:479K  stansontech
 st2300srg.pdf

ST2300SRG N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION The ST2300SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and n... See More ⇒

 9.8. Size:187K  stansontech
 st2301a.pdf

ST2301A P Channel Enhancement Mode MOSFET -3.2A DESCRIPTION ST2301A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and not... See More ⇒

 9.9. Size:1440K  jestek
 jst2300.pdf

JST2300 20V,5A N-Channel Mosfet PACKAGE FEATURES RDS(ON) 25m @VGS=4.5V RDS(ON) 38m @VGS=2.5V APPLICATIONS PWM Applications Load Switch Power Management MARKING N-CHANNEL MOSFET Absolute maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage V 20 V DS Gate-Source Voltage V 12 V GS Continuous Drain Current I 5 A D Pl... See More ⇒

 9.10. Size:592K  jestek
 jst2301h.pdf

JST2301H -20V,-3A P-Channel Mosfet FEATURES SOT-23 RDS(ON) 110m @VGS=-4.5V RDS(ON) 140m @VGS=-2.5V APPLICATIONS Load Switch for Portable Devices DC/DC Converter MARKING P-CHANNEL MOSFET Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage V 12 GS I -3 D Continuous Drain Current A Pulse... See More ⇒

 9.11. Size:583K  jestek
 jst2302h.pdf

JST2302H 20V,3A N-Channel Mosfet FEATURES SOT-23 RDS(ON) 46m @VGS=4.5V RDS(ON) 70m @VGS=2.5V APPLICATIONS Load Switch for Portable Devices DC/DC Converter MARKING N-CHANNEL MOSFET Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage V 10 GS I 3 D Continuous Drain Current A Pulsed Drain ... See More ⇒

 9.12. Size:888K  winsok
 wst2301.pdf

WST2301 P-Ch MOSFET General Description Product Summery The WST2301 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate -20V 100m -2.9A charge for most of the small power switching and load switch applications. Applications The WST2301 meet the RoHS and Green Product requirement with full fu... See More ⇒

 9.13. Size:1269K  winsok
 wst2304.pdf

WST2304 N-Ch MOSFET General Description Product Summery The WST2304 is the highest performance trench BVDSS RDSON ID N-ch MOSFET with extreme high cell density , 20V 20m 6.3A which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. Applications The WST2304 meet the RoHS and Green Power management in portable and ... See More ⇒

 9.14. Size:980K  winsok
 wst2300.pdf

WST2300 N-Ch MOSFET General Description Product Summery The WST2300 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate 20V 50m 4.4A charge for most of the small power switching and load switch applications. Applications The WST2300 meet the RoHS and Green Product requirement with full funct... See More ⇒

 9.15. Size:1367K  winsok
 wst2302.pdf

WST2302 N-Ch MOSFET General Description Product Summery The WST2302 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 20V 70m 3.0A for most of the small power switching and load switch applications. Applications The WST2302 meet the RoHS and Green Product requirement with full functio... See More ⇒

 9.16. Size:1740K  winsok
 wst2307.pdf

WST2307 P-Ch MOSFET Product Summery General Description The WST2307 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -30V 51m -5.8A for most of the small power switching and load switch applications. Applications The WST230 meet the RoHS and Green Product requirement with full functio... See More ⇒

 9.17. Size:1114K  winsok
 wst2301a.pdf

WST2301A P-Ch MOSFET General Description Product Summery The WST2301A is the highest performance BVDSS RDSON ID trench P-ch MOSFET with extreme high cell density , which provide excellent RDSON and -20V 140m -2.5A gate charge for most of the small power switching and load switch applications. Applications The WST2301A meet the RoHS and Green Product requirement with full... See More ⇒

 9.18. Size:1208K  winsok
 wst2300a.pdf

WST2300A N-Ch MOSFET General Description Product Summery The WST2300A is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 20V 60m 3.0A gate charge for most of the small power switching and load switch applications. Applications The WST2300A meet the RoHS and Green Product requirement with full ... See More ⇒

 9.19. Size:1337K  winsok
 wst2304a.pdf

WST2304A N-Ch MOSFET General Description Product Summery The WST2304A is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent 30V 35m 5.2A RDSON and gate charge for most of the small power switching and load switch Applications applications. The WST2304A meet the RoHS and Green Product requirement with full ... See More ⇒

 9.20. Size:1613K  winsok
 wst2305a.pdf

WST2305A P-Ch MOSFET General Description Product Summery The WST2305A is the highest performance BVDSS RDSON ID trench P-ch MOSFET with extreme high cell density,which provide excellent RDSON -4A -20V 60m and gate charge for most of the synchronous buck converter applications . Applications The WST2305A meet the RoHS and Green Product requirement,with full function Hi... See More ⇒

 9.21. Size:951K  winsok
 wst2305.pdf

WST2305 P-Ch MOSFET General Description Product Summery The WST2305 is the highest performance BVDSS RDSON ID trench P-ch MOSFET with extreme high cell density,which provide excellent RDSON and -4.4A -20V 50m gate charge for most of the synchronous buck converter applications . Applications The WST2305 meet the RoHS and Green Product requirement,with full function H... See More ⇒

 9.22. Size:878K  cn vbsemi
 st2302.pdf

ST2302 www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC Co... See More ⇒

 9.23. Size:848K  cn vbsemi
 st2304.pdf

ST2304 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) G 1... See More ⇒

 9.24. Size:919K  cn vbsemi
 st2302msrg.pdf

ST2302MSRG www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/D... See More ⇒

 9.25. Size:878K  cn vbsemi
 st2300s23rg.pdf

ST2300S23RG www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/... See More ⇒