ST2303SRG MOSFET. Datasheet pdf. Equivalent

ST2303SRG P Channel Enhancement Mode MOSFET -2.6A DESCRIPTION ST2303SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone a

WST2303AP-Ch MOSFETGeneral Description Product SummeryThe WST2303A is the highest performance BVDSS RDSON ID trench P-ch MOSFET with extreme high cell density , which provide excellent RDSON and -20V 144m -2.5Agate charge for most of the small power switching and load switch applications. Applications The WST2303A meet the RoHS and Green Product requirement with full

WST2303 P-Ch MOSFETGeneral Description Product SummeryThe WST2303 is the highest performance trench BVDSS RDSON ID P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -20V 65m -3.8Afor most of the small power switching and load switch applications. Applications The WST2303 meet the RoHS and Green High Frequency Point-of-Load

ST2305 P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST2305 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and not

ST2300 N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION The ST2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and noteboo

ST2302 N Channel Enhancement Mode MOSFET 3.6A DESCRIPTION ST2302 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and noteboo

ST2305A P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST2305A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and no

ST2304SRG N Channel Enhancement Mode MOSFET 3.2A DESCRIPTION ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone an

ST2304 N Channel Enhancement Mode MOSFET 3.2A DESCRIPTION ST2304 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and note

ST2300SRG N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION The ST2300SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and n

ST2301A P Channel Enhancement Mode MOSFET -3.2A DESCRIPTION ST2301A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and not

JST230020V,5A N-Channel MosfetPACKAGEFEATURESRDS(ON) 25m @VGS=4.5VRDS(ON) 38m @VGS=2.5V APPLICATIONSPWM ApplicationsLoad SwitchPower ManagementMARKINGN-CHANNEL MOSFETAbsolute maximum ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitDrain-Source Voltage V 20 VDSGate-Source Voltage V 12 VGSContinuous Drain Current I 5 ADPl

JST2301H-20V,-3AP-Channel MosfetFEATURESSOT-23RDS(ON) 110m @VGS=-4.5VRDS(ON) 140m @VGS=-2.5VAPPLICATIONSLoad Switch for Portable DevicesDC/DC ConverterMARKING P-CHANNEL MOSFETMaximum ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitDrain-Source Voltage VDS -20VGate-Source Voltage V 12GSI -3DContinuous Drain CurrentAPulse

JST2302H20V,3AN-Channel MosfetFEATURESSOT-23RDS(ON) 46m @VGS=4.5VRDS(ON) 70m @VGS=2.5VAPPLICATIONSLoad Switch for Portable DevicesDC/DC ConverterMARKING N-CHANNEL MOSFETMaximum ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitDrain-Source Voltage VDS 20VGate-Source Voltage V 10GSI 3DContinuous Drain CurrentAPulsed Drain

WST2301 P-Ch MOSFETGeneral Description Product SummeryThe WST2301 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate -20V 100m -2.9Acharge for most of the small power switching and load switch applications. Applications The WST2301 meet the RoHS and Green Product requirement with full fu

WST2304N-Ch MOSFETGeneral Description Product SummeryThe WST2304 is the highest performance trench BVDSS RDSON ID N-ch MOSFET with extreme high cell density , 20V 20m 6.3Awhich provide excellent RDSON and gate charge for most of the small power switching and load switch applications.Applications The WST2304 meet the RoHS and Green Power management in portable and

WST2300 N-Ch MOSFETGeneral Description Product SummeryThe WST2300 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate 20V 50m 4.4Acharge for most of the small power switching and load switch applications. Applications The WST2300 meet the RoHS and Green Product requirement with full funct

WST2302N-Ch MOSFETGeneral Description Product SummeryThe WST2302 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 20V 70m 3.0Afor most of the small power switching and load switch applications.Applications The WST2302 meet the RoHS and Green Product requirement with full functio

WST2307P-Ch MOSFETProduct SummeryGeneral Description The WST2307 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density ,which provide excellent RDSON and gate charge-30V 51m -5.8Afor most of the small power switching and loadswitch applications.Applications The WST230 meet the RoHS and Green Product requirement with full functio

WST2301A P-Ch MOSFETGeneral Description Product SummeryThe WST2301A is the highest performance BVDSS RDSON ID trench P-ch MOSFET with extreme high cell density , which provide excellent RDSON and -20V 140m -2.5Agate charge for most of the small power switching and load switch applications. Applications The WST2301A meet the RoHS and Green Product requirement with full

WST2300A N-Ch MOSFETGeneral Description Product SummeryThe WST2300A is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 20V 60m 3.0Agate charge for most of the small power switching and load switch applications. Applications The WST2300A meet the RoHS and Green Product requirement with full

WST2304AN-Ch MOSFETGeneral Description Product SummeryThe WST2304A is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent 30V 35m 5.2ARDSON and gate charge for most of the small power switching and load switch Applications applications. The WST2304A meet the RoHS and Green Product requirement with full

WST2305AP-Ch MOSFETGeneral Description Product SummeryThe WST2305A is the highest performance BVDSS RDSON ID trench P-ch MOSFET with extreme high cell density,which provide excellent RDSON -4A-20V 60mand gate charge for most of the synchronous buck converter applications . Applications The WST2305A meet the RoHS and Green Product requirement,with full function Hi

WST2305 P-Ch MOSFETGeneral Description Product SummeryThe WST2305 is the highest performance BVDSS RDSON ID trench P-ch MOSFET with extreme high cell density,which provide excellent RDSON and -4.4A-20V 50mgate charge for most of the synchronous buck converter applications . Applications The WST2305 meet the RoHS and Green Product requirement,with full function H

ST2302www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC Co

ST2304www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G 1

ST2302MSRGwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/D

ST2300S23RGwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/