ST2303SRG - описание и поиск аналогов

 ..1. Size:200K  stansontech
 st2303srg.pdf 

ST2303SRG P Channel Enhancement Mode MOSFET -2.6A DESCRIPTION ST2303SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone a

 8.1. Size:1367K  winsok
 wst2303a.pdf 

WST2303A P-Ch MOSFET General Description Product Summery The WST2303A is the highest performance BVDSS RDSON ID trench P-ch MOSFET with extreme high cell density , which provide excellent RDSON and -20V 144m -2.5A gate charge for most of the small power switching and load switch applications. Applications The WST2303A meet the RoHS and Green Product requirement with full

 8.2. Size:1058K  winsok
 wst2303.pdf 

WST2303 P-Ch MOSFET General Description Product Summery The WST2303 is the highest performance trench BVDSS RDSON ID P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -20V 65m -3.8A for most of the small power switching and load switch applications. Applications The WST2303 meet the RoHS and Green High Frequency Point-of-Load

 9.1. Size:212K  stansontech
 st2305.pdf 

ST2305 P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST2305 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and not

 9.2. Size:383K  stansontech
 st2300.pdf 

ST2300 N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION The ST2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and noteboo

 9.3. Size:188K  stansontech
 st2302.pdf 

ST2302 N Channel Enhancement Mode MOSFET 3.6A DESCRIPTION ST2302 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and noteboo

 9.4. Size:161K  stansontech
 st2305a.pdf 

ST2305A P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST2305A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and no

 9.5. Size:753K  stansontech
 st2304srg.pdf 

ST2304SRG N Channel Enhancement Mode MOSFET 3.2A DESCRIPTION ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone an

 9.6. Size:897K  stansontech
 st2304.pdf 

ST2304 N Channel Enhancement Mode MOSFET 3.2A DESCRIPTION ST2304 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and note

 9.7. Size:479K  stansontech
 st2300srg.pdf 

ST2300SRG N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION The ST2300SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and n

 9.8. Size:187K  stansontech
 st2301a.pdf 

ST2301A P Channel Enhancement Mode MOSFET -3.2A DESCRIPTION ST2301A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and not

 9.9. Size:1440K  jestek
 jst2300.pdf 

JST2300 20V,5A N-Channel Mosfet PACKAGE FEATURES RDS(ON) 25m @VGS=4.5V RDS(ON) 38m @VGS=2.5V APPLICATIONS PWM Applications Load Switch Power Management MARKING N-CHANNEL MOSFET Absolute maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage V 20 V DS Gate-Source Voltage V 12 V GS Continuous Drain Current I 5 A D Pl

 9.10. Size:592K  jestek
 jst2301h.pdf 

JST2301H -20V,-3A P-Channel Mosfet FEATURES SOT-23 RDS(ON) 110m @VGS=-4.5V RDS(ON) 140m @VGS=-2.5V APPLICATIONS Load Switch for Portable Devices DC/DC Converter MARKING P-CHANNEL MOSFET Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage V 12 GS I -3 D Continuous Drain Current A Pulse

 9.11. Size:583K  jestek
 jst2302h.pdf 

JST2302H 20V,3A N-Channel Mosfet FEATURES SOT-23 RDS(ON) 46m @VGS=4.5V RDS(ON) 70m @VGS=2.5V APPLICATIONS Load Switch for Portable Devices DC/DC Converter MARKING N-CHANNEL MOSFET Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage V 10 GS I 3 D Continuous Drain Current A Pulsed Drain

 9.12. Size:888K  winsok
 wst2301.pdf 

WST2301 P-Ch MOSFET General Description Product Summery The WST2301 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate -20V 100m -2.9A charge for most of the small power switching and load switch applications. Applications The WST2301 meet the RoHS and Green Product requirement with full fu

 9.13. Size:1269K  winsok
 wst2304.pdf 

WST2304 N-Ch MOSFET General Description Product Summery The WST2304 is the highest performance trench BVDSS RDSON ID N-ch MOSFET with extreme high cell density , 20V 20m 6.3A which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. Applications The WST2304 meet the RoHS and Green Power management in portable and

 9.14. Size:980K  winsok
 wst2300.pdf 

WST2300 N-Ch MOSFET General Description Product Summery The WST2300 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate 20V 50m 4.4A charge for most of the small power switching and load switch applications. Applications The WST2300 meet the RoHS and Green Product requirement with full funct

 9.15. Size:1367K  winsok
 wst2302.pdf 

WST2302 N-Ch MOSFET General Description Product Summery The WST2302 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 20V 70m 3.0A for most of the small power switching and load switch applications. Applications The WST2302 meet the RoHS and Green Product requirement with full functio

 9.16. Size:1740K  winsok
 wst2307.pdf 

WST2307 P-Ch MOSFET Product Summery General Description The WST2307 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -30V 51m -5.8A for most of the small power switching and load switch applications. Applications The WST230 meet the RoHS and Green Product requirement with full functio

 9.17. Size:1114K  winsok
 wst2301a.pdf 

WST2301A P-Ch MOSFET General Description Product Summery The WST2301A is the highest performance BVDSS RDSON ID trench P-ch MOSFET with extreme high cell density , which provide excellent RDSON and -20V 140m -2.5A gate charge for most of the small power switching and load switch applications. Applications The WST2301A meet the RoHS and Green Product requirement with full

 9.18. Size:1208K  winsok
 wst2300a.pdf 

WST2300A N-Ch MOSFET General Description Product Summery The WST2300A is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 20V 60m 3.0A gate charge for most of the small power switching and load switch applications. Applications The WST2300A meet the RoHS and Green Product requirement with full

 9.19. Size:1337K  winsok
 wst2304a.pdf 

WST2304A N-Ch MOSFET General Description Product Summery The WST2304A is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent 30V 35m 5.2A RDSON and gate charge for most of the small power switching and load switch Applications applications. The WST2304A meet the RoHS and Green Product requirement with full

 9.20. Size:1613K  winsok
 wst2305a.pdf 

WST2305A P-Ch MOSFET General Description Product Summery The WST2305A is the highest performance BVDSS RDSON ID trench P-ch MOSFET with extreme high cell density,which provide excellent RDSON -4A -20V 60m and gate charge for most of the synchronous buck converter applications . Applications The WST2305A meet the RoHS and Green Product requirement,with full function Hi

 9.21. Size:951K  winsok
 wst2305.pdf 

WST2305 P-Ch MOSFET General Description Product Summery The WST2305 is the highest performance BVDSS RDSON ID trench P-ch MOSFET with extreme high cell density,which provide excellent RDSON and -4.4A -20V 50m gate charge for most of the synchronous buck converter applications . Applications The WST2305 meet the RoHS and Green Product requirement,with full function H

 9.22. Size:878K  cn vbsemi
 st2302.pdf 

ST2302 www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC Co

 9.23. Size:848K  cn vbsemi
 st2304.pdf 

ST2304 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) G 1

 9.24. Size:919K  cn vbsemi
 st2302msrg.pdf 

ST2302MSRG www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/D

 9.25. Size:878K  cn vbsemi
 st2300s23rg.pdf 

ST2300S23RG www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/