IXTH14N80 Specs and Replacement
Type Designator: IXTH14N80
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 14 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 33 nS
Cossⓘ -
Output Capacitance: 310 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
Package: TO247
- MOSFET ⓘ Cross-Reference Search
IXTH14N80 datasheet
..1. Size:88K ixys
ixth14n80.pdf 
IXTH 14N80 VDSS = 800 V MegaMOSTMFET ID25 = 14 A RDS(on) = 0.70 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V VGS Continuous 20 V VGSM Transient 30 V D (TAB) ID25 TC = 25 C14 A IDM TC = 25 C, pulse width limited by TJM 56 A PD TC = 25 C 300 W G... See More ⇒
7.1. Size:45K ixys
ixth14n100.pdf
IXTH 14N100 VDSS = 1000 V MegaMOSTMFET ID25 = 14 A RDS(on) = 0.82 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1000 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C14 A G = Gate, D = Drain, IDM TC = 25 C, pulse width limited by TJM 56 A... See More ⇒
8.1. Size:174K ixys
ixth140p10t ixtt140p10t.pdf
Preliminary Technical Information TrenchPTM VDSS = -100V IXTT140P10T Power MOSFETs ID25 = -140A IXTH140P10T RDS(on) 12m P-Channel Enhancement Mode TO-268 (IXTT) Avalanche Rated G S D (Tab) Symbol Test Conditions Maximum Ratings TO-247 (IXTH) VDSS TJ = 25 C to 150 C -100 V VDGR TJ = 25 C to 150 C, RGS = 1M -100 V VGSS Continuous 15 V ... See More ⇒
9.2. Size:175K ixys
ixtt12n150 ixth12n150.pdf
High Voltage VDSS = 1500V IXTT12N150 ID25 = 12A Power MOSFET IXTH12N150 RDS(on) 2.2 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C 1500 V D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 1500 V VGSS Continuous 30 V TO-247 (IXTH) VG... See More ⇒
9.3. Size:148K ixys
ixth15n70.pdf
IXTH15N70 PCB 24 IXTH 15N70 VDSS = 700 V MegaMOSTMFET ID (cont) = 15 A RDS(on) = 0.45 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C 700 V VDGR TJ = 25 C to 150 C; RGS = 1 M 700 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 T... See More ⇒
9.4. Size:105K ixys
ixth10n100 ixtm10n100 ixth12n100 ixtm12n100.pdf
VDSS ID25 RDS(on) MegaMOSTMFET IXTH / IXTM 10N100 1000 V 10 A 1.20 IXTH / IXTM 12N100 1000 V 12 A 1.05 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1000 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C 10N... See More ⇒
9.5. Size:206K ixys
ixth1n450hv.pdf
High Voltage VDSS = 4500V IXTT1N450HV Power MOSFET ID25 = 1A IXTH1N450HV RDS(on) 80 N-Channel Enhancement Mode TO-268HV (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-247HV (IXTH) VDSS TJ = 25 C to 150 C 4500 V VDGR TJ = 25 C to 150 C, RGS = 1M 4500 V VGSS Continuous 20 V VGSM Transient 30 ... See More ⇒
9.6. Size:43K ixys
ixth16p20.pdf
IXTH 16P20 VDSS = -200 V Standard Power MOSFET ID25 = -16 A P-Channel Enhancement Mode RDS(on) = 0.16 Avalanche Rated Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C -200 V VDGR TJ = 25 C to 150 C; RGS = 1 M -200 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C -16 A IDM TC = 25 ... See More ⇒
9.7. Size:199K ixys
ixth16n50d2 ixtt16n50d2.pdf
Advance Technical Information Depletion Mode VDSX = 500V IXTH16N50D2 MOSFET ID(on) > 16A IXTT16N50D2 RDS(on) 240m N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings D D (Tab) S VDSX TJ = 25 C to 150 C 500 V VDGX TJ = 25 C to 150 C, RGS = 1M 500 V VGSX Continuous 20 V TO-268 (IXTT) VGSM Transient 30 V PD TC = 2... See More ⇒
9.8. Size:186K ixys
ixth160n10t ixtq160n10t.pdf
Preliminary Technical Information IXTH160N10T VDSS = 100 V TrenchMVTM IXTQ160N10T ID25 = 160 A Power MOSFET RDS(on) 7.0 m N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G (TAB) D S VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGSM Transient 30 V TO-3P (IXTQ)... See More ⇒
9.9. Size:211K ixys
ixth182n055t ixtq182n055t.pdf
Preliminary Technical Information IXTH182N055T VDSS = 55 V TrenchMVTM IXTQ182N055T ID25 = 182 A Power MOSFET RDS(on) 5.0 m N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G (TAB) D VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V VGSM Transient 20 V TO-3P ... See More ⇒
9.10. Size:200K ixys
ixta12n65x2 ixth12n65x2 ixtp12n65x2.pdf
Advance Technical Information X2-Class VDSS = 650V IXTA12N65X2 Power MOSFET ID25 = 12A IXTP12N65X2 RDS(on) 300m IXTH12N65X2 N-Channel Enhancement Mode TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 ... See More ⇒
9.11. Size:205K ixys
ixth180n10t ixtq180n10t.pdf
Preliminary Technical Information IXTH180N10T VDSS = 100 V TrenchMVTM IXTQ180N10T ID25 = 180 A Power MOSFET RDS(on) 6.4 m N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G (TAB) D VDSS TJ = 25 C to 175 C 100 V S VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGSM Transient 30 V TO... See More ⇒
9.12. Size:316K ixys
ixth15n60 ixtm15n60 ixth20n60 ixtm20n60.pdf
Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine ... See More ⇒
9.13. Size:184K ixys
ixth160n075t ixtq160n075t.pdf
Preliminary Technical Information IXTH160N075T VDSS = 75 V TrenchMVTM IXTQ160N075T ID25 = 160 A Power MOSFET RDS(on) 6.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXTH) VDSS TJ = 25 C to 175 C 75 V VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V VGSM Transient 20 V ID25 TC = 25 C 160 A D (TAB... See More ⇒
9.14. Size:203K ixys
ixth180n085t ixtq180n085t.pdf
Preliminary Technical Information IXTH180N085T VDSS = 85 V TrenchMVTM IXTQ180N085T ID25 = 180 A Power MOSFET RDS(on) 5.5 m N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G (TAB) D S VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V VGSM Transient 20 V TO-... See More ⇒
9.15. Size:124K ixys
ixth10p50 ixtt10p50 ixth11p50 ixtt11p50.pdf
VDSS ID25 RDS(on) Standard Power MOSFET P-Channel Enhancement Mode IXTH/IXTT 10P50 -500 V -10 A 0.90 Avalanche Rated IXTH/IXTT 11P50 -500 V -11 A 0.75 TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C -500 V VDGR TJ = 25 C to 150 C; RGS = 1 M -500 V VGS Continuous 20 V (TAB) VGSM Transient 30 V D ID25 TC = 25 C 10P50 -10 A 11P50 -... See More ⇒
9.17. Size:98K ixys
ixth11n80 ixtm11n80 ixth13n80 ixtm13n80.pdf
VDSS ID25 RDS(on) IXTH / IXTM 11N80 800 V 11 A 0.95 MegaMOSTMFET IXTH / IXTM 13N80 800 V 13 A 0.80 N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V D (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C 11N80 11... See More ⇒
9.18. Size:62K ixys
ixth12n50a ixtm12n50a.pdf
VDSS ID25 RDS(on) Standard IXTH 12 N50A 500 V 12 A 0.4 Power MOSFET IXTM 12 N50A 500 V 12 A 0.4 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V D (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C12 A IDM TC ... See More ⇒
9.19. Size:573K ixys
ixth11p50 ixtt11p50.pdf
VDSS = -500 V Standard Power MOSFET ID25 = -11 A P-Channel Enhancement Mode IXTH 11P50 Avalanche Rated RDS(on) = 0.75 IXTT 11P50 TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C -500 V VDGR TJ = 25 C to 150 C; RGS = 1 M -500 V VGS Continuous 20 V (TAB) VGSM Transient 30 V D ID25 TC = 25 C -11 A IDM TC = 25 C, p... See More ⇒
9.20. Size:238K ixys
ixta1n170dhv ixth1n170dhv.pdf
Advance Technical Information Depletion Mode VDSX = 1700V IXTA1N170DHV MOSFET ID(on) > 1A IXTH1N170DHV RDS(on) 16 N-Channel TO-263HV (IXTA) G S D (Tab) TO-247HV (IXTH) Symbol Test Conditions Maximum Ratings VDSX TJ = 25 C to 150 C 1700 V VDGX TJ = 25 C to 150 C, RGS = 1M 1700 V VGSX Continuous 20 V VGSM Transient 30 V ... See More ⇒
9.21. Size:142K ixys
ixth130n10t ixtq130n10t.pdf
VDSS = 100V IXTH130N10T TrenchMVTM ID25 = 130A IXTQ130N10T Power MOSFET RDS(on) 9.1m N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 175 C 100 V D (TAB) S VDGR TJ = 25 C to 175 C, RGS = 1M 100 V VGSM Transient 20 V TO-3P (IXTQ) ID25 TC = 25 C 130 A ILRMS Lead C... See More ⇒
9.22. Size:252K ixys
ixta1n200p3hv ixth1n200p3 ixth1n200p3hv.pdf
Preliminary Technical Information High Voltage VDSS = 2000V IXTA1N200P3HV Power MOSFET ID25 = 1.0A IXTH1N200P3HV RDS(on) 40 IXTH1N200P3 N-Channel Enhancement Mode TO-263HV (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-247HV (IXTH) VDSS TJ = 25 C to 150 C 2000 V VDGR TJ = 25 C to 150 C, RGS = 1M ... See More ⇒
9.23. Size:184K ixys
ixth152n085t ixtq152n085t.pdf
Preliminary Technical Information IXTH152N085T VDSS = 85 V TrenchMVTM IXTQ152N085T ID25 = 152 A Power MOSFET RDS(on) 7.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXTH) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V VGSM Transient 20 V ID25 TC = 25 C 152 A ILRMS L... See More ⇒
9.24. Size:126K ixys
ixth130n20t.pdf
Preliminary Technical Information IXTH130N20T VDSS = 200V TrenchHVTM ID25 = 130A Power MOSFET RDS(on) 16m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 VDSS TJ = 25 C to 175 C 200 V VDGR TJ = 25 C to 175 C; RGS = 1M 200 V VGSM Transient 30 V ID25 TC = 25 C 130 A ILRMS Lead Current Limit, RMS... See More ⇒
9.25. Size:122K ixys
ixth12n150 ixtt12n150.pdf
High Voltage VDSS = 1500V IXTT12N150 ID25 = 12A Power MOSFETs IXTH12N150 RDS(on) 2 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C 1500 V D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 1500 V VGSS Continuous 30 V TO-247 (IXTH) VGSM Transient... See More ⇒
9.26. Size:172K ixys
ixth16n10d2 ixtt16n10d2.pdf
Advance Technical Information Depletion Mode VDSX = 100V IXTH16N10D2 MOSFET ID(on) > 16A IXTT16N10D2 RDS(on) 64m N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings D D (Tab) S VDSX TJ = 25 C to 150 C 100 V VDGX TJ = 25 C to 150 C, RGS = 1M 100 V VGSX Continuous 20 V VGSM Transient 30 V TO-268 (IXTT) PD TC = 25 C 695... See More ⇒
9.27. Size:124K ixys
ixth160n15t.pdf
Preliminary Technical Information IXTH160N15T VDSS = 150 V TrenchHVTM ID25 = 160 A Power MOSFET RDS(on) 9.6 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 VDSS TJ = 25 C to 175 C 150 V VDGR TJ = 25 C to 175 C; RGS = 1M 150 V VGSM Transient 30 V ID25 TC = 25 C 160 A G (TAB) ILRMS Lead Curr... See More ⇒
9.28. Size:344K ixys
ixta12n70x2 ixtp12n70x2 ixth12n70x2.pdf
Preliminary Technical Information X2-Class VDSS = 700V IXTA12N70X2 Power MOSFET ID25 = 12A IXTP12N70X2 RDS(on) 300m IXTH12N70X2 N-Channel Enhancement Mode TO-263 (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25 C to 150 C 700 V VDGR TJ = 25 C to 150 C, RGS = 1M 700 V VGSS Continuous 30 V ... See More ⇒
9.29. Size:73K ixys
ixth1n100 ixtt1n100.pdf
Advance Technical Information VDSS = 1000 V IXTH 1N100 High Voltage MOSFET ID25 = 1.5 A IXTT 1N100 RDS(on) = 11 N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1000 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC ... See More ⇒
9.30. Size:545K ixys
ixth12n120.pdf
VDSS = 1200 V IXTH 12N120 ID (cont) = 12 A Power MOSFET, Avalanche Rated RDS(on)= 1.4 High Voltage Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C 1200 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1200 V VGS Continuous 30 V D (TAB) VGSM Transient 40 V ID25 TC = 25 C12 A IDM TC = 25 C, pulse width limit... See More ⇒
9.31. Size:208K ixys
ixth1n300p3hv ixtt1n300p3hv.pdf
Preliminary Technical Information High Voltage VDSS = 3000V IXTT1N300P3HV Power MOSFET ID25 = 1.00A IXTH1N300P3HV RDS(on) 50 N-Channel Enhancement Mode TO-268HV (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 3000 V TO-247HV (IXTH) VDGR TJ = 25 C to 150 C, RGS = 1M 3000 V VGSS... See More ⇒
9.32. Size:160K ixys
ixth1r8n220p3hv.pdf
Advance Technical Information High Voltage VDSS = 2200V IXTH1R8N220P3HV Power MOSFET ID25 = 1.8A RDS(on) 21.5 N-Channel Enhancement Mode TO-247HV Symbol Test Conditions Maximum Ratings G S VDSS TJ = 25 C to 150 C 2200 V D (Tab) D VDGR TJ = 25 C to 150 C, RGS = 1M 2200 V VGSS Continuous 20 V G = Gate D = Dra... See More ⇒
9.34. Size:148K ixys
ixth1r4n250p3.pdf
Advance Technical Information High Voltage VDSS = 2500V IXTH1R4N250P3 Power MOSFET ID25 = 1.4A RDS(on) 28 N-Channel Enhancement Mode Fast Intrinsic Diode TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings D Tab S VDSS TJ = 25 C to 150 C 2500 V VDGR TJ = 25 C to 150 C, RGS = 1M 2500 V G = Gate D = Drain VGSS... See More ⇒
9.36. Size:133K ixys
ixth15n50l2-ixtp15n50l2.pdf
Linear L2TM Power VDSS = 500V IXTH15N50L2 MOSFET w/Extended ID25 = 15A IXTP15N50L2 RDS(on) 480m FBSOA N-Channel Enhancement Mode Avalanche Rated TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V G (TAB) D VDGR TJ = 25 C to 150 C, RGS = 1M 500 V S VGSS Continuous 20 V TO-247 (IXTH) VGSM Transient 30... See More ⇒
9.38. Size:46K ixys
ixth13n110.pdf
IXTH 13N110 VDSS = 1100 V MegaMOSTMFET ID25 = 13 A RDS(on) = 0.92 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C 1100 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1100 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C13 A G = Gate, D = Drain, IDM TC = 25 C, pulse width limited by TJM 52 ... See More ⇒
9.39. Size:260K inchange semiconductor
ixth130n10t.pdf
isc N-Channel MOSFET Transistor IXTH130N10T FEATURES With TO-247 packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V G... See More ⇒
Detailed specifications: IXTH12N45MB
, IXTH12N50A
, IXTH12N50MA
, IXTH12N50MB
, IXTH12N90
, IXTH13N110
, IXTH13N80
, IXTH14N100
, RU7088R
, IXTH15N35MA
, IXTH15N35MB
, IXTH15N40MA
, IXTH15N40MB
, IXTH15N60
, IXTH20M60MB
, IXTH20N55MA
, IXTH20N55MB
.
Keywords - IXTH14N80 MOSFET specs
IXTH14N80 cross reference
IXTH14N80 equivalent finder
IXTH14N80 pdf lookup
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
