ST2304 Specs and Replacement

Type Designator: ST2304

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm

Package: SOT-23

ST2304 substitution

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ST2304 datasheet

 ..1. Size:897K  stansontech
st2304.pdf pdf_icon

ST2304

ST2304 N Channel Enhancement Mode MOSFET 3.2A DESCRIPTION ST2304 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and note... See More ⇒

 ..2. Size:848K  cn vbsemi
st2304.pdf pdf_icon

ST2304

ST2304 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) G 1... See More ⇒

 0.1. Size:753K  stansontech
st2304srg.pdf pdf_icon

ST2304

ST2304SRG N Channel Enhancement Mode MOSFET 3.2A DESCRIPTION ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone an... See More ⇒

 0.2. Size:1269K  winsok
wst2304.pdf pdf_icon

ST2304

WST2304 N-Ch MOSFET General Description Product Summery The WST2304 is the highest performance trench BVDSS RDSON ID N-ch MOSFET with extreme high cell density , 20V 20m 6.3A which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. Applications The WST2304 meet the RoHS and Green Power management in portable and ... See More ⇒

Detailed specifications: ST10E4, ST12N10D, ST13P10, ST2300, ST2300SRG, ST2301A, ST2302, ST2303SRG, AON6414A, ST2304SRG, ST2305, ST2305A, ST2318SRG, ST2319SRG, ST2341A, ST2341S23RG, ST2342

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.