ST2304. Аналоги и основные параметры

Наименование производителя: ST2304

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1.25 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.2 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 12 ns

Cossⓘ - Выходная емкость: 110 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.058 Ohm

Тип корпуса: SOT-23

Аналог (замена) для ST2304

- подборⓘ MOSFET транзистора по параметрам

 

ST2304 даташит

 ..1. Size:897K  stansontech
 st2304.pdf pdf_icon

ST2304

ST2304 N Channel Enhancement Mode MOSFET 3.2A DESCRIPTION ST2304 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and note

 ..2. Size:848K  cn vbsemi
 st2304.pdf pdf_icon

ST2304

ST2304 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) G 1

 0.1. Size:753K  stansontech
 st2304srg.pdf pdf_icon

ST2304

ST2304SRG N Channel Enhancement Mode MOSFET 3.2A DESCRIPTION ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone an

 0.2. Size:1269K  winsok
 wst2304.pdf pdf_icon

ST2304

WST2304 N-Ch MOSFET General Description Product Summery The WST2304 is the highest performance trench BVDSS RDSON ID N-ch MOSFET with extreme high cell density , 20V 20m 6.3A which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. Applications The WST2304 meet the RoHS and Green Power management in portable and

ПОКАЗАТЬ ЕЩЁ

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