ST2304 N Channel Enhancement Mode MOSFET 3.2A DESCRIPTION ST2304 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and note

ST2304www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G 1

ST2304SRG N Channel Enhancement Mode MOSFET 3.2A DESCRIPTION ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone an

WST2304N-Ch MOSFETGeneral Description Product SummeryThe WST2304 is the highest performance trench BVDSS RDSON ID N-ch MOSFET with extreme high cell density , 20V 20m 6.3Awhich provide excellent RDSON and gate charge for most of the small power switching and load switch applications.Applications The WST2304 meet the RoHS and Green Power management in portable and

WST2304AN-Ch MOSFETGeneral Description Product SummeryThe WST2304A is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent 30V 35m 5.2ARDSON and gate charge for most of the small power switching and load switch Applications applications. The WST2304A meet the RoHS and Green Product requirement with full