ST2341A MOSFET Datasheet: P-Ch, 30V, 6A. Full specification with pinout and replacement list

ST2341A Specs and Replacement

Type Designator: ST2341A

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 160 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: SOT-23

ST2341A substitution

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ST2341A datasheet

..1. Size:576K stansontech
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ST2341A P Channel Enhancement Mode MOSFET -6.0A DESCRIPTION ST2341A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and n... See More ⇒

8.1. Size:598K stansontech
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ST2341SRG P Channel Enhancement Mode MOSFET -3.2A DESCRIPTION ST2341SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and... See More ⇒

8.2. Size:602K stansontech
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ST2341S23RG P Channel Enhancement Mode MOSFET -5.3A DESCRIPTION ST2341S23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular pho... See More ⇒

8.3. Size:906K cn vbsemi
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ST2341S23R www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-... See More ⇒

Detailed specifications: ST2302 , ST2303SRG , ST2304 , ST2304SRG , ST2305 , ST2305A , ST2318SRG , ST2319SRG , IRFP250N , ST2341S23RG , ST2342 , ST25N10 , ST3400S23RG , ST3400SRG , ST3401M23RG , ST3401SRG , ST3406 .