ST2341A. Аналоги и основные параметры

Наименование производителя: ST2341A

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1.25 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 6 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 35 ns

Cossⓘ - Выходная емкость: 160 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.03 Ohm

Тип корпуса: SOT-23

Аналог (замена) для ST2341A

- подборⓘ MOSFET транзистора по параметрам

 

ST2341A даташит

 ..1. Size:576K  stansontech
 st2341a.pdf pdf_icon

ST2341A

ST2341A P Channel Enhancement Mode MOSFET -6.0A DESCRIPTION ST2341A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and n

 8.1. Size:598K  stansontech
 st2341srg.pdf pdf_icon

ST2341A

ST2341SRG P Channel Enhancement Mode MOSFET -3.2A DESCRIPTION ST2341SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and

 8.2. Size:602K  stansontech
 st2341s23rg.pdf pdf_icon

ST2341A

ST2341S23RG P Channel Enhancement Mode MOSFET -5.3A DESCRIPTION ST2341S23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular pho

 8.3. Size:906K  cn vbsemi
 st2341s23r.pdf pdf_icon

ST2341A

ST2341S23R www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... ST2302, ST2303SRG, ST2304, ST2304SRG, ST2305, ST2305A, ST2318SRG, ST2319SRG, IRFP250N, ST2341S23RG, ST2342, ST25N10, ST3400S23RG, ST3400SRG, ST3401M23RG, ST3401SRG, ST3406