ST36N06 MOSFET Datasheet: P-Ch, 60V, 36A. Full specification with pinout and replacement list

ST36N06 Specs and Replacement

Type Designator: ST36N06

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 36 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm

Package: TO-220

ST36N06 substitution

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ST36N06 datasheet

..1. Size:497K stansontech
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ST36N06 N Channel Enhancement Mode MOSFET 36.0A DESCRIPTION ST36N06 is used trench technology to provide excellent RDS(on) and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION FEATURE TO220-3L 60V/20.0A, RDS(ON) = 30m (Typ.) @VGS = 10V 60V/20.0A, RDS(ON) = 45m @VGS = 4.5V Super high density cell design f... See More ⇒

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ST36N10D N Channel Enhancement Mode MOSFET 36.0A DESCRIPTION STN36N10D is used trench technology to provide excellent RDS(on) and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION (D-PAK) FEATURE 100V/20.0A, RDS(ON) = 40m (Typ.) TO-252 TO-251 @VGS = 10V 100V/20.0A, RDS(ON) = 42m @VGS = 4.5V Super high densi... See More ⇒

Detailed specifications: ST3406, ST3406SRG, ST3407S23RG, ST3407SRG, ST3413A, ST3414A, ST3421SRG, ST3422A, K4145, ST36N10D, ST47P06D, ST75N75, ST9435A, ST9435GP, SUB65P04-15, SUB75P03-07, SUB85N10-10