All MOSFET. SUD06N10-225L Datasheet

 

SUD06N10-225L MOSFET. Datasheet pdf. Equivalent


   Type Designator: SUD06N10-225L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 6.5 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 2.7 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 42 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TO-252

 SUD06N10-225L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SUD06N10-225L Datasheet (PDF)

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 sud06n10-225l.pdf

SUD06N10-225L SUD06N10-225L

SUD06N10-225LVishay SiliconixN-Channel 100-V (D-S) 175_C MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A) Qg (Typ)0.200 @ VGS = 10 V 6.5100 27100 2.70.225 @ VGS = 4.5 V 6.0TO-252DGDrain Connected to TabG D STop ViewSOrder Number: SUD06N10-225LN-Channel MOSFETSUD06N10-225LE3 (lLead (Pb)-Free)ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Para

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History: FDC610PZ | FDB3682

 

 
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