SUD09P10-195 Specs and Replacement
Type Designator: SUD09P10-195
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 32.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 65 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.195 Ohm
Package: TO-252
SUD09P10-195 substitution
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SUD09P10-195 datasheet
sud09p10-195.pdf
SUD09P10-195 Vishay Siliconix P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.195 at VGS = - 10 V - 8.8 TrenchFET Power MOSFET - 100 11.7 0.210 at VGS = - 4.5 V - 8.5 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power Switch ... See More ⇒
sud09p10-195.pdf
INCHANGE Semiconductor Isc P-Channel MOSFET Transistor SUD09P10-195 FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Motor contorl DC-DC conventers ABSOLUTE MAXIMUM RATING... See More ⇒
Detailed specifications: ST75N75, ST9435A, ST9435GP, SUB65P04-15, SUB75P03-07, SUB85N10-10, SUD06N10-225L, SUD08P06-155L, AON7506, SUD15N15-95, SUD17N25-165, SUD19N20-90, SUD19P06-60, SUD19P06-60L, SUD20N10-66L, SUD20P15-306, SUD23N06-31
Keywords - SUD09P10-195 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: SUD40N02-3M3P | BSZ010NE2LS5
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