All MOSFET. SUD09P10-195 Datasheet

 

SUD09P10-195 Datasheet and Replacement


   Type Designator: SUD09P10-195
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 32.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.195 Ohm
   Package: TO-252
 

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SUD09P10-195 Datasheet (PDF)

 ..1. Size:169K  vishay
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SUD09P10-195

SUD09P10-195Vishay SiliconixP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.195 at VGS = - 10 V - 8.8 TrenchFET Power MOSFET- 100 11.70.210 at VGS = - 4.5 V - 8.5 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power Switch

 ..2. Size:206K  inchange semiconductor
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SUD09P10-195

INCHANGE SemiconductorIsc P-Channel MOSFET Transistor SUD09P10-195FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsMotor contorlDC-DC conventersABSOLUTE MAXIMUM RATING

Datasheet: ST75N75 , ST9435A , ST9435GP , SUB65P04-15 , SUB75P03-07 , SUB85N10-10 , SUD06N10-225L , SUD08P06-155L , IRFP250 , SUD15N15-95 , SUD17N25-165 , SUD19N20-90 , SUD19P06-60 , SUD19P06-60L , SUD20N10-66L , SUD20P15-306 , SUD23N06-31 .

History: NCE70T180 | IRFS4321PBF | FTP02N60C | MTM76320 | PDN3912S | FS5UM-9 | BUZ40B

Keywords - SUD09P10-195 MOSFET datasheet

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