All MOSFET. SUD09P10-195 Datasheet

 

SUD09P10-195 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SUD09P10-195
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 32.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 8.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 23.2 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.195 Ohm
   Package: TO-252

 SUD09P10-195 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SUD09P10-195 Datasheet (PDF)

 ..1. Size:169K  vishay
 sud09p10-195.pdf

SUD09P10-195 SUD09P10-195

SUD09P10-195Vishay SiliconixP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.195 at VGS = - 10 V - 8.8 TrenchFET Power MOSFET- 100 11.70.210 at VGS = - 4.5 V - 8.5 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power Switch

 ..2. Size:206K  inchange semiconductor
 sud09p10-195.pdf

SUD09P10-195 SUD09P10-195

INCHANGE SemiconductorIsc P-Channel MOSFET Transistor SUD09P10-195FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsMotor contorlDC-DC conventersABSOLUTE MAXIMUM RATING

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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