SUD19P06-60 PDF and Equivalents Search

 

SUD19P06-60 Specs and Replacement

Type Designator: SUD19P06-60

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: TO-252

SUD19P06-60 substitution

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SUD19P06-60 datasheet

 ..1. Size:166K  vishay
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SUD19P06-60

SUD19P06-60 Vishay Siliconix P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ) Definition 0.060 at VGS = - 10 V - 19 TrenchFET Power MOSFET - 60 26 0.077 at VGS = - 4.5 V - 16.8 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS High Side Switch for F... See More ⇒

 ..2. Size:884K  cn vbsemi
sud19p06-60.pdf pdf_icon

SUD19P06-60

SUD19P06-60 www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ) Definition 0.053 at VGS = - 10 V - 25 TrenchFET Power MOSFET - 60 26 0.062 at VGS = - 4.5 V - 20 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS High Side Switch for Full Bridge ... See More ⇒

 0.1. Size:80K  vishay
sud19p06-60l.pdf pdf_icon

SUD19P06-60

New Product SUD19P06-60L Vishay Siliconix P-Channel 60-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( )ID (A) Qg (Typ) 175 C Junction Temperature 0.060 at VGS = - 10 V - 19 RoHS - 60 26 COMPLIANT 0.077 at VGS = - 4.5 V - 16.8 TO-252 S G Drain Connected to Tab G D S Top View D Ordering Information SUD19P06-60L-E3 (L... See More ⇒

 6.1. Size:114K  vishay
sud19p06.pdf pdf_icon

SUD19P06-60

New Product SUD19P06-60 Vishay Siliconix P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)d Qg (Typ) 100 % UIS Tested 0.060 at VGS = - 10 V - 19 RoHS - 60 26 COMPLIANT 0.077 at VGS = - 4.5 V - 16.8 APPLICATIONS High Side Switch for Full Bridge Converter DC/DC Converter for LCD Display TO-252 S G D... See More ⇒

Detailed specifications: SUB75P03-07, SUB85N10-10, SUD06N10-225L, SUD08P06-155L, SUD09P10-195, SUD15N15-95, SUD17N25-165, SUD19N20-90, AO4407, SUD19P06-60L, SUD20N10-66L, SUD20P15-306, SUD23N06-31, SUD23N06-31L, SUD25N04-25, SUD25N15-52, SUD35N05-26L

Keywords - SUD19P06-60 MOSFET specs

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