SUD20N10-66L PDF and Equivalents Search

 

SUD20N10-66L Specs and Replacement

Type Designator: SUD20N10-66L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 41.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.066 Ohm

Package: TO-252

SUD20N10-66L substitution

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SUD20N10-66L datasheet

 ..1. Size:163K  vishay
 sud20n10-66l.pdf pdf_icon

SUD20N10-66L

SUD20N10-66L Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.066 at VGS = 10 V 18.2 Material categorization 100 19.8 For definitions of compliance please see 0.080 at VGS = 4.5 V 13.2 www.vishay.com/doc?99912 TO-252 APPLICATIONS D DC/DC Conv... See More ⇒

 9.1. Size:173K  vishay
 sud20p15-306.pdf pdf_icon

SUD20N10-66L

SUD20P15-306 Vishay Siliconix P-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.306 at VGS = - 10 V - 8.1 Material categorization For definitions of compliance please see 0.312 at VGS = - 8 V - 8 - 150 6.2 www.vishay.com/doc?99912 0.335 at VGS = - 6 V - 7.7 APPLICATIO... See More ⇒

Detailed specifications: SUD06N10-225L, SUD08P06-155L, SUD09P10-195, SUD15N15-95, SUD17N25-165, SUD19N20-90, SUD19P06-60, SUD19P06-60L, 4N60, SUD20P15-306, SUD23N06-31, SUD23N06-31L, SUD25N04-25, SUD25N15-52, SUD35N05-26L, SUD35N10-26P, SUD40N02-08

Keywords - SUD20N10-66L MOSFET specs

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