All MOSFET. SUD20N10-66L Datasheet

 

SUD20N10-66L Datasheet and Replacement


   Type Designator: SUD20N10-66L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 41.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 16.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.066 Ohm
   Package: TO-252
 

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SUD20N10-66L Datasheet (PDF)

 ..1. Size:163K  vishay
 sud20n10-66l.pdf pdf_icon

SUD20N10-66L

SUD20N10-66LVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.066 at VGS = 10 V 18.2 Material categorization:100 19.8For definitions of compliance please see0.080 at VGS = 4.5 V 13.2www.vishay.com/doc?99912TO-252APPLICATIONSD DC/DC Conv

 9.1. Size:173K  vishay
 sud20p15-306.pdf pdf_icon

SUD20N10-66L

SUD20P15-306Vishay SiliconixP-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.306 at VGS = - 10 V - 8.1 Material categorization:For definitions of compliance please see0.312 at VGS = - 8 V - 8- 150 6.2www.vishay.com/doc?999120.335 at VGS = - 6 V - 7.7APPLICATIO

Datasheet: SUD06N10-225L , SUD08P06-155L , SUD09P10-195 , SUD15N15-95 , SUD17N25-165 , SUD19N20-90 , SUD19P06-60 , SUD19P06-60L , 10N65 , SUD20P15-306 , SUD23N06-31 , SUD23N06-31L , SUD25N04-25 , SUD25N15-52 , SUD35N05-26L , SUD35N10-26P , SUD40N02-08 .

History: SWD051R08ES | 2SK788

Keywords - SUD20N10-66L MOSFET datasheet

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 SUD20N10-66L replacement

 

 
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