SUD20P15-306 Specs and Replacement
Type Designator: SUD20P15-306
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 41.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 56 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.306 Ohm
Package: TO-252
SUD20P15-306 substitution
- MOSFET ⓘ Cross-Reference Search
SUD20P15-306 datasheet
sud20p15-306.pdf
SUD20P15-306 Vishay Siliconix P-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.306 at VGS = - 10 V - 8.1 Material categorization For definitions of compliance please see 0.312 at VGS = - 8 V - 8 - 150 6.2 www.vishay.com/doc?99912 0.335 at VGS = - 6 V - 7.7 APPLICATIO... See More ⇒
sud20n10-66l.pdf
SUD20N10-66L Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.066 at VGS = 10 V 18.2 Material categorization 100 19.8 For definitions of compliance please see 0.080 at VGS = 4.5 V 13.2 www.vishay.com/doc?99912 TO-252 APPLICATIONS D DC/DC Conv... See More ⇒
Detailed specifications: SUD08P06-155L, SUD09P10-195, SUD15N15-95, SUD17N25-165, SUD19N20-90, SUD19P06-60, SUD19P06-60L, SUD20N10-66L, IRFP250, SUD23N06-31, SUD23N06-31L, SUD25N04-25, SUD25N15-52, SUD35N05-26L, SUD35N10-26P, SUD40N02-08, SUD40N02-3M3P
Keywords - SUD20P15-306 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: ST36N10D | 2SK1178 | IRF7324D1PBF | 2SK2596 | 4N70KG-TF3-T | IAUC100N04S6L025 | IRF7309PBF-1
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