All MOSFET. SUD20P15-306 Datasheet

 

SUD20P15-306 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SUD20P15-306
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 41.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 8.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 27 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 56 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.306 Ohm
   Package: TO-252

 SUD20P15-306 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SUD20P15-306 Datasheet (PDF)

 ..1. Size:173K  vishay
 sud20p15-306.pdf

SUD20P15-306 SUD20P15-306

SUD20P15-306Vishay SiliconixP-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.306 at VGS = - 10 V - 8.1 Material categorization:For definitions of compliance please see0.312 at VGS = - 8 V - 8- 150 6.2www.vishay.com/doc?999120.335 at VGS = - 6 V - 7.7APPLICATIO

 9.1. Size:163K  vishay
 sud20n10-66l.pdf

SUD20P15-306 SUD20P15-306

SUD20N10-66LVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.066 at VGS = 10 V 18.2 Material categorization:100 19.8For definitions of compliance please see0.080 at VGS = 4.5 V 13.2www.vishay.com/doc?99912TO-252APPLICATIONSD DC/DC Conv

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , SKD502T , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: SUM2153 | HAT2050T | IXFT69N30P | MFE930 | IXTP110N055T2 | AOD446

 

 
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