SUD50N02-06P PDF and Equivalents Search

 

SUD50N02-06P Specs and Replacement

Type Designator: SUD50N02-06P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 65 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 900 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: TO-252

SUD50N02-06P substitution

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SUD50N02-06P datasheet

 ..1. Size:158K  vishay
 sud50n02-06p.pdf pdf_icon

SUD50N02-06P

SUD50N02-06P Vishay Siliconix N-Channel 20 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a 175 C Junction Temperature 0.0060 at VGS = 10 V PWM Optimized for High Efficiency 26 20 0.0095 at VGS = 4.5 V 100 % Rg Tested 21 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Synchronous Buck DC/DC C... See More ⇒

 3.1. Size:65K  vishay
 sud50n02-06.pdf pdf_icon

SUD50N02-06P

SUD50N02-06 Vishay Siliconix N-Channel 20-V (D-S), 175_C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A)a, b D 175_C Maximum Junction Temperature D 100% Rg Tested 0.006 @ VGS = 4.5 V 30 20 20 0.009 @ VGS = 2.5 V 25 D TO-252 G Drain Connected to Tab G D S Top View Order Number S SUD50N02-06 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T... See More ⇒

 4.1. Size:143K  vishay
 sud50n02-04p.pdf pdf_icon

SUD50N02-06P

SUD50N02-04P Vishay Siliconix N-Channel 20 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a 175 C Junction Temperature 0.0043 at VGS = 10 V 34 PWM Optimized for High Efficiency 20 0.006 at VGS = 4.5 V 28 Material categorization For definitions of compliance please see www.vishay.com/doc?99912 TO-25... See More ⇒

 4.2. Size:58K  vishay
 sud50n02-09p.pdf pdf_icon

SUD50N02-06P

SUD50N02-09P Vishay Siliconix N-Channel 20-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET D 175_C Junction Temperature VDS (V) rDS(on) (W) ID (A)a D PWM Optimized for High Efficiency D 100% Rg Tested 0.0095 @ VGS = 10 V 20 20 20 0.017 @ VGS = 4.5 V 15 APPLICATIONS D High-Side Synchronous Buck DC/DC Conversion - Desktop D TO-252 - Server G Drain Conn... See More ⇒

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Detailed specifications: SUD40N10-25, SUD42N03-3M9P, SUD45P03-09, SUD45P03-10, SUD45P03-15, SUD45P04-16P, SUD50N02-04P, SUD50N02-06, IRFB31N20D, SUD50N02-09P, SUD50N024-09P, SUD50N025-06P, SUD50N03-06AP, SUD50N03-06P, SUD50N03-09P, SUD50N03-11, SUD50N03-12P

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