SUD50N02-06P - аналоги, даташиты, параметры транзистора

SUD50N02-06P Datasheet (PDF)

..1. Size:158K vishay
sud50n02-06p.pdf pdf_icon

SUD50N02-06PVishay SiliconixN-Channel 20 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a 175 C Junction Temperature0.0060 at VGS = 10 V PWM Optimized for High Efficiency26200.0095 at VGS = 4.5 V 100 % Rg Tested21 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Synchronous Buck DC/DC C

3.1. Size:65K vishay
sud50n02-06.pdf pdf_icon

SUD50N02-06Vishay SiliconixN-Channel 20-V (D-S), 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)a, bD 175_C Maximum Junction TemperatureD 100% Rg Tested0.006 @ VGS = 4.5 V 3020200.009 @ VGS = 2.5 V 25DTO-252GDrain Connected to TabG D STop ViewOrder Number: SSUD50N02-06N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (T

4.1. Size:143K vishay
sud50n02-04p.pdf pdf_icon

SUD50N02-04PVishay SiliconixN-Channel 20 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a 175 C Junction Temperature0.0043 at VGS = 10 V 34 PWM Optimized for High Efficiency200.006 at VGS = 4.5 V 28 Material categorization:For definitions of compliance please seewww.vishay.com/doc?99912TO-25

4.2. Size:58K vishay
sud50n02-09p.pdf pdf_icon

SUD50N02-09PVishay SiliconixN-Channel 20-V (D-S) 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETD 175_C Junction TemperatureVDS (V) rDS(on) (W) ID (A)aD PWM Optimized for High EfficiencyD 100% Rg Tested0.0095 @ VGS = 10 V 2020200.017 @ VGS = 4.5 V 15 APPLICATIONSD High-Side Synchronous Buck DC/DCConversion- DesktopDTO-252- ServerGDrain Conn

Другие MOSFET... SUD40N10-25 , SUD42N03-3M9P , SUD45P03-09 , SUD45P03-10 , SUD45P03-15 , SUD45P04-16P , SUD50N02-04P , SUD50N02-06 , IRFB31N20D , SUD50N02-09P , SUD50N024-09P , SUD50N025-06P , SUD50N03-06AP , SUD50N03-06P , SUD50N03-09P , SUD50N03-11 , SUD50N03-12P .