All MOSFET. SUD50N02-09P Datasheet

 

SUD50N02-09P Datasheet and Replacement


   Type Designator: SUD50N02-09P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 39.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 470 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: TO-252
 

 SUD50N02-09P substitution

   - MOSFET ⓘ Cross-Reference Search

 

SUD50N02-09P Datasheet (PDF)

 ..1. Size:58K  vishay
sud50n02-09p.pdf pdf_icon

SUD50N02-09P

SUD50N02-09PVishay SiliconixN-Channel 20-V (D-S) 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETD 175_C Junction TemperatureVDS (V) rDS(on) (W) ID (A)aD PWM Optimized for High EfficiencyD 100% Rg Tested0.0095 @ VGS = 10 V 2020200.017 @ VGS = 4.5 V 15 APPLICATIONSD High-Side Synchronous Buck DC/DCConversion- DesktopDTO-252- ServerGDrain Conn

 4.1. Size:143K  vishay
sud50n02-04p.pdf pdf_icon

SUD50N02-09P

SUD50N02-04PVishay SiliconixN-Channel 20 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a 175 C Junction Temperature0.0043 at VGS = 10 V 34 PWM Optimized for High Efficiency200.006 at VGS = 4.5 V 28 Material categorization:For definitions of compliance please seewww.vishay.com/doc?99912TO-25

 4.2. Size:65K  vishay
sud50n02-06.pdf pdf_icon

SUD50N02-09P

SUD50N02-06Vishay SiliconixN-Channel 20-V (D-S), 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)a, bD 175_C Maximum Junction TemperatureD 100% Rg Tested0.006 @ VGS = 4.5 V 3020200.009 @ VGS = 2.5 V 25DTO-252GDrain Connected to TabG D STop ViewOrder Number: SSUD50N02-06N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (T

 4.3. Size:158K  vishay
sud50n02-06p.pdf pdf_icon

SUD50N02-09P

SUD50N02-06PVishay SiliconixN-Channel 20 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a 175 C Junction Temperature0.0060 at VGS = 10 V PWM Optimized for High Efficiency26200.0095 at VGS = 4.5 V 100 % Rg Tested21 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Synchronous Buck DC/DC C

Datasheet: SUD42N03-3M9P , SUD45P03-09 , SUD45P03-10 , SUD45P03-15 , SUD45P04-16P , SUD50N02-04P , SUD50N02-06 , SUD50N02-06P , IRFZ48N , SUD50N024-09P , SUD50N025-06P , SUD50N03-06AP , SUD50N03-06P , SUD50N03-09P , SUD50N03-11 , SUD50N03-12P , SUD50N03-16P .

History: QM6001D | UPA1913 | HM10N80F | SVS7N60DD2TR | SM4309PSKP | SIB419DK | P3606BEA

Keywords - SUD50N02-09P MOSFET datasheet

 SUD50N02-09P cross reference
 SUD50N02-09P equivalent finder
 SUD50N02-09P lookup
 SUD50N02-09P substitution
 SUD50N02-09P replacement

 

 
Back to Top

 


 
.