SUD50N02-09P - аналоги, параметры транзистора

SUD50N02-09P даташит

..1. Size:58K vishay
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SUD50N02-09P Vishay Siliconix N-Channel 20-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET D 175_C Junction Temperature VDS (V) rDS(on) (W) ID (A)a D PWM Optimized for High Efficiency D 100% Rg Tested 0.0095 @ VGS = 10 V 20 20 20 0.017 @ VGS = 4.5 V 15 APPLICATIONS D High-Side Synchronous Buck DC/DC Conversion - Desktop D TO-252 - Server G Drain Conn

4.1. Size:143K vishay
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SUD50N02-04P Vishay Siliconix N-Channel 20 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a 175 C Junction Temperature 0.0043 at VGS = 10 V 34 PWM Optimized for High Efficiency 20 0.006 at VGS = 4.5 V 28 Material categorization For definitions of compliance please see www.vishay.com/doc?99912 TO-25

4.2. Size:65K vishay
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SUD50N02-06 Vishay Siliconix N-Channel 20-V (D-S), 175_C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A)a, b D 175_C Maximum Junction Temperature D 100% Rg Tested 0.006 @ VGS = 4.5 V 30 20 20 0.009 @ VGS = 2.5 V 25 D TO-252 G Drain Connected to Tab G D S Top View Order Number S SUD50N02-06 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T

4.3. Size:158K vishay
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SUD50N02-06P Vishay Siliconix N-Channel 20 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a 175 C Junction Temperature 0.0060 at VGS = 10 V PWM Optimized for High Efficiency 26 20 0.0095 at VGS = 4.5 V 100 % Rg Tested 21 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Synchronous Buck DC/DC C

Другие MOSFET... SUD42N03-3M9P , SUD45P03-09 , SUD45P03-10 , SUD45P03-15 , SUD45P04-16P , SUD50N02-04P , SUD50N02-06 , SUD50N02-06P , STP65NF06 , SUD50N024-09P , SUD50N025-06P , SUD50N03-06AP , SUD50N03-06P , SUD50N03-09P , SUD50N03-11 , SUD50N03-12P , SUD50N03-16P .