All MOSFET. SUD50N03-12P Datasheet

 

SUD50N03-12P MOSFET. Datasheet pdf. Equivalent


   Type Designator: SUD50N03-12P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 46.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 17.5 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 28 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 285 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO-252

 SUD50N03-12P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SUD50N03-12P Datasheet (PDF)

 ..1. Size:157K  vishay
 sud50n03-12p.pdf

SUD50N03-12P SUD50N03-12P

SUD50N03-12PVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a 100 % Rg and UIS Tested0.0120 at VGS = 10 V 17.5 Compliant to RoHS Directive 2002/95/EC300.0175 at VGS = 4.5 V 14.5TO-252DGDrain Connected to TabG D STop ViewSOrdering Information: SUD50N03-12P-E3 (Lead (PB) fr

 4.1. Size:141K  vishay
 sud50n03-11.pdf

SUD50N03-12P SUD50N03-12P

SUD50N03-11Vishay SiliconixN-Channel 30-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a 175 C Maximum Junction TemperatureRoHS0.011 at VGS = 10 V 50COMPLIANT 30 100 % Rg Tested0.017 at VGS = 4.5 V 43DTO-252GDrain Connected to TabG D SSTop ViewOrdering Information: SUD50N03-11-E3 (Lead

 4.2. Size:73K  vishay
 sud50n03-16p.pdf

SUD50N03-12P SUD50N03-12P

SUD50N03-16PNew ProductVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETD PWM OptimizedVDS (V) rDS(on) (W) ID (A)aD 100% Rg Tested0.016 @ VGS = 10 V 15APPLICATIONS30300.024 @ VGS = 4.5 V 12D High-Side DC/DC- Desktop- ServerDD DDR DC/DC ConverterTO-252GDrain Connected to TabG D STop ViewSOrdering Inform

 4.3. Size:108K  vishay
 sud50n03-10.pdf

SUD50N03-12P SUD50N03-12P

SUD50N03-10SiliconixN-Channel 30-V (D-S), 175_C MOSFETProduct SummaryVDS (V) rDS(on) (W) ID (A)0.010 @ VGS = 10 V "1530300.019 @ VGS = 4.5 V "12DTO-252GDrain Connected to TabG D STop ViewOrder Number: SSUD50N03-10N-Channel MOSFETAbsolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)Parameter Symbol Limit UnitDrain-Source Voltage VDS 30VVGate-

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
Back to Top