Справочник MOSFET. SUD50N03-12P

 

SUD50N03-12P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: SUD50N03-12P

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 46.8 W

Предельно допустимое напряжение сток-исток (Uds): 30 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Пороговое напряжение включения Ugs(th): 3 V

Максимально допустимый постоянный ток стока (Id): 17.5 A

Максимальная температура канала (Tj): 175 °C

Общий заряд затвора (Qg): 28 nC

Время нарастания (tr): 15 ns

Выходная емкость (Cd): 285 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.012 Ohm

Тип корпуса: TO-252

Аналог (замена) для SUD50N03-12P

 

 

SUD50N03-12P Datasheet (PDF)

1.1. sud50n03-16p.pdf Size:73K _upd

SUD50N03-12P
SUD50N03-12P

SUD50N03-16P New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET D PWM Optimized VDS (V) rDS(on) (W) ID (A)a D 100% Rg Tested 0.016 @ VGS = 10 V 15 APPLICATIONS 30 30 0.024 @ VGS = 4.5 V 12 D High-Side DC/DC - Desktop - Server D D DDR DC/DC Converter TO-252 G Drain Connected to Tab G D S Top View S Ordering Inform

1.2. sud50n03-06ap.pdf Size:90K _upd

SUD50N03-12P
SUD50N03-12P

SUD50N03-06AP New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A)a, e Qg (Typ) D Optimized for Low–Side Synchronous Rectifier Operation 0.0057 @ VGS = 10 V 90 RoHS 30 30 30 30 COMPLIANT D 100% Rg Tested 0.0078 @ VGS = 4.5 V 77 APPLICATIONS D DC/DC Converters D Synchronous Rectifiers TO-252 D

 1.3. sud50n03-06p.pdf Size:63K _upd

SUD50N03-12P
SUD50N03-12P

SUD50N03-06P Vishay Siliconix N-Channel 30-V (D-S) 175 _C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET D 175 _C Junction Temperature VDS (V) rDS(on) (W) ID (A)b D Optimized for Low-Side Synchronous Rectifier * Operation 0.0065 at VGS = 10 V 84b 30 30 D 100 % Rg Tested 0.0095 at VGS = 4.5 V 59b APPLICATIONS D DC/DC Converters D Synchronous Rectifiers TO-252 D Dr

1.4. sud50n03-09p.pdf Size:149K _upd

SUD50N03-12P
SUD50N03-12P

SUD50N03-09P Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V) RDS(on) (Ω) ID (A)b Available • Optimized for High- or Low-Side 0.0095 at VGS = 10 V 63b RoHS* • 100 % Rg Tested 30 COMPLIANT 0.014 at VGS = 4.5 V 52b APPLICATIONS • DC/DC Converters • Synchronous Rectifiers TO-252 D Drain Connected to T

 1.5. sud50n03-11.pdf Size:141K _upd

SUD50N03-12P
SUD50N03-12P

SUD50N03-11 Vishay Siliconix N-Channel 30-V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V) RDS(on) (Ω) ID (A)a • 175 °C Maximum Junction Temperature RoHS 0.011 at VGS = 10 V 50 COMPLIANT 30 • 100 % Rg Tested 0.017 at VGS = 4.5 V 43 D TO-252 G Drain Connected to Tab G D S S Top View Ordering Information: SUD50N03-11-E3 (Lead

1.6. sud50n03-12p.pdf Size:157K _upd

SUD50N03-12P
SUD50N03-12P

SUD50N03-12P Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V) RDS(on) () ID (A)a • 100 % Rg and UIS Tested 0.0120 at VGS = 10 V 17.5 • Compliant to RoHS Directive 2002/95/EC 30 0.0175 at VGS = 4.5 V 14.5 TO-252 D G Drain Connected to Tab G D S Top View S Ordering Information: SUD50N03-12P-E3 (Lead (PB) fr

1.7. sud50n03-16p.pdf Size:73K _vishay

SUD50N03-12P
SUD50N03-12P

SUD50N03-16P New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET D PWM Optimized VDS (V) rDS(on) (W) ID (A)a D 100% Rg Tested 0.016 @ VGS = 10 V 15 APPLICATIONS 30 30 0.024 @ VGS = 4.5 V 12 D High-Side DC/DC - Desktop - Server D D DDR DC/DC Converter TO-252 G Drain Connected to Tab G D S Top View S Ordering Inform

1.8. sud50n03-06ap.pdf Size:90K _vishay

SUD50N03-12P
SUD50N03-12P

SUD50N03-06AP New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A)a, e Qg (Typ) D Optimized for Low–Side Synchronous Rectifier Operation 0.0057 @ VGS = 10 V 90 RoHS 30 30 30 30 COMPLIANT D 100% Rg Tested 0.0078 @ VGS = 4.5 V 77 APPLICATIONS D DC/DC Converters D Synchronous Rectifiers TO-252 D

1.9. sud50n03-06p.pdf Size:63K _vishay

SUD50N03-12P
SUD50N03-12P

SUD50N03-06P Vishay Siliconix N-Channel 30-V (D-S) 175 _C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET D 175 _C Junction Temperature VDS (V) rDS(on) (W) ID (A)b D Optimized for Low-Side Synchronous Rectifier * Operation 0.0065 at VGS = 10 V 84b 30 30 D 100 % Rg Tested 0.0095 at VGS = 4.5 V 59b APPLICATIONS D DC/DC Converters D Synchronous Rectifiers TO-252 D Dr

1.10. sud50n03-07.pdf Size:95K _vishay

SUD50N03-12P
SUD50N03-12P

SUD50N03-07 Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) D 175_C Maximum Junction Temperature D 100% Rg Tested 0.007 @ VGS = 10 V 20 30 30 0.010 @ VGS = 4.5 V 16 D TO-252 G Drain Connected to Tab G D S Top View Ordering Information: S SUD50N03-07 SUD50N03-07—E3 ( Lead Free) N-Channel MOS

1.11. sud50n03-09p.pdf Size:149K _vishay

SUD50N03-12P
SUD50N03-12P

SUD50N03-09P Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V) RDS(on) (Ω) ID (A)b Available • Optimized for High- or Low-Side 0.0095 at VGS = 10 V 63b RoHS* • 100 % Rg Tested 30 COMPLIANT 0.014 at VGS = 4.5 V 52b APPLICATIONS • DC/DC Converters • Synchronous Rectifiers TO-252 D Drain Connected to T

1.12. sud50n03-11.pdf Size:141K _vishay

SUD50N03-12P
SUD50N03-12P

SUD50N03-11 Vishay Siliconix N-Channel 30-V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V) RDS(on) (Ω) ID (A)a • 175 °C Maximum Junction Temperature RoHS 0.011 at VGS = 10 V 50 COMPLIANT 30 • 100 % Rg Tested 0.017 at VGS = 4.5 V 43 D TO-252 G Drain Connected to Tab G D S S Top View Ordering Information: SUD50N03-11-E3 (Lead

1.13. sud50n03-12p.pdf Size:157K _vishay

SUD50N03-12P
SUD50N03-12P

SUD50N03-12P Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V) RDS(on) () ID (A)a • 100 % Rg and UIS Tested 0.0120 at VGS = 10 V 17.5 • Compliant to RoHS Directive 2002/95/EC 30 0.0175 at VGS = 4.5 V 14.5 TO-252 D G Drain Connected to Tab G D S Top View S Ordering Information: SUD50N03-12P-E3 (Lead (PB) fr

1.14. sud50n03-10.pdf Size:108K _vishay

SUD50N03-12P
SUD50N03-12P

SUD50N03-10 Siliconix N-Channel 30-V (D-S), 175_C MOSFET Product Summary VDS (V) rDS(on) (W) ID (A) 0.010 @ VGS = 10 V "15 30 30 0.019 @ VGS = 4.5 V "12 D TO-252 G Drain Connected to Tab G D S Top View Order Number: S SUD50N03-10 N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V V Gate-

1.15. sud50n03-7m3p.pdf Size:93K _vishay

SUD50N03-12P
SUD50N03-12P

SUD50N03-7m3P New Product Vishay Siliconix N-Channel 30-V (D-S) WFET FEATURES PRODUCT SUMMARY • Low Qgd WFET® Technology VDS (V) rDS(on) (Ω) ID (A)a, e Qg (Typ) • 100 % Rg and UIS Tested 0.0073 at VGS = 10 V 50 RoHS 30 15.7 nC COMPLIANT 0.0087 at VGS = 4.5 V 50 APPLICATIONS • DC/DC Conversion, High-Side - Notebook CPU core TO-252 - VRM D Drain Connected to T

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