SUD50N04-8M8P MOSFET Datasheet: N-Ch, 40V, 50A. Full specification with pinout and replacement list

SUD50N04-8M8P Specs and Replacement

Type Designator: SUD50N04-8M8P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 260 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm

Package: TO-252

SUD50N04-8M8P substitution

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SUD50N04-8M8P datasheet

..1. Size:177K vishay
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SUD50N04-8m8P Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0088 at VGS = 10 V 50 TrenchFET Power MOSFET 40 16 nC 0.0105 at VGS = 4.5 V 50 100 % UIS Tested 100 % Rg Tested PWM Optimized Compliant to RoHS Directive 2002/95/EC A... See More ⇒

..2. Size:1428K cn vbsemi
sud50n04-8m8p.pdf pdf_icon

SUD50N04-8M8P www.VBsemi.tw N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, c Qg (Typ.) 100 % Rg and UIS Tested RoHS 0.0050 at VGS = 10 V 85 COMPLIANT 40 80 nC 0.0065 at VGS = 4.5 V 70 APPLICATIONS Synchronous Rectification Power Supplies D TO-252 G G D S S N-Channel MOSFET ABSOLUTE MAXIM... See More ⇒

5.1. Size:173K vishay
sud50n04-37p.pdf pdf_icon

New Product SUD50N04-37P Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Qg (Typ.) 100 % UIS Tested RoHS 0.037 at VGS = 10 V 8 40 5.3 nC COMPLIANT 0.046 at VGS = 4.5 V 8 APPLICATIONS Backlight Inverter for LCD Display Full Bridge DC/DC Converter TO-252 D G Drain Connected t... See More ⇒

5.2. Size:146K vishay
sud50n04-16p.pdf pdf_icon

SUD50N04-16P Vishay Siliconix N-Channel 40-V (D-S), 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, c Qg (Typ.) 100 % Rg and UIS Tested RoHS 0.016 at VGS = 10 V 20 COMPLIANT 40 15.6 nC 0.018 at VGS = 4.5 V 20 APPLICATIONS LCD TV Inverter Secondary Synchronous Rectification TO-252 D G Drain Connected to ... See More ⇒