Справочник MOSFET. SUD50N04-8M8P

 

SUD50N04-8M8P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SUD50N04-8M8P
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 48.1 W
   Предельно допустимое напряжение сток-исток |Uds|: 40 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 3 V
   Максимально допустимый постоянный ток стока |Id|: 50 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 37 nC
   Время нарастания (tr): 15 ns
   Выходная емкость (Cd): 260 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0088 Ohm
   Тип корпуса: TO-252

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SUD50N04-8M8P Datasheet (PDF)

 ..1. Size:177K  vishay
 sud50n04-8m8p.pdf

SUD50N04-8M8P SUD50N04-8M8P

SUD50N04-8m8PVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0088 at VGS = 10 V 50 TrenchFET Power MOSFET40 16 nC0.0105 at VGS = 4.5 V 50 100 % UIS Tested 100 % Rg Tested PWM Optimized Compliant to RoHS Directive 2002/95/ECA

 ..2. Size:1428K  cn vbsemi
 sud50n04-8m8p.pdf

SUD50N04-8M8P SUD50N04-8M8P

SUD50N04-8M8Pwww.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, c Qg (Typ.) 100 % Rg and UIS TestedRoHS0.0050 at VGS = 10 V 85 COMPLIANT 40 80 nC0.0065 at VGS = 4.5 V 70APPLICATIONS Synchronous Rectification Power SuppliesDTO-252 GG D S SN-Channel MOSFETABSOLUTE MAXIM

 5.1. Size:173K  vishay
 sud50n04-37p.pdf

SUD50N04-8M8P SUD50N04-8M8P

New ProductSUD50N04-37PVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)a Qg (Typ.) 100 % UIS TestedRoHS 0.037 at VGS = 10 V 840 5.3 nC COMPLIANT 0.046 at VGS = 4.5 V 8APPLICATIONS Backlight Inverter for LCD Display Full Bridge DC/DC ConverterTO-252DGDrain Connected t

 5.2. Size:146K  vishay
 sud50n04-16p.pdf

SUD50N04-8M8P SUD50N04-8M8P

SUD50N04-16PVishay SiliconixN-Channel 40-V (D-S), 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, c Qg (Typ.) 100 % Rg and UIS TestedRoHS0.016 at VGS = 10 V 20COMPLIANT 40 15.6 nC0.018 at VGS = 4.5 V 20APPLICATIONS LCD TV Inverter Secondary Synchronous RectificationTO-252DGDrain Connected to

 5.3. Size:69K  vishay
 sud50n04-05l.pdf

SUD50N04-8M8P SUD50N04-8M8P

New ProductSUD50N04-05LVishay SiliconixN-Channel 40-V (D-S), 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)c 175 C Junction Temperature0.0054 at VGS = 10 V RoHS 11540 COMPLIANT 0.0069 at VGS = 4.5 V 102DTO-252GDrain Connected to TabG D STop ViewSOrdering Information: SUD50N04-05L-E3 (Lead (Pb)

 5.4. Size:75K  vishay
 sud50n04-09h.pdf

SUD50N04-8M8P SUD50N04-8M8P

SUD50N04-09HVishay SiliconixN-Channel 40-V (D-S), 175 C MOSFETFEATURES TrenchFET Power MOSFETSPRODUCT SUMMARY 175 C Junction TemperatureV(BR)DSS (V) rDS(on) ()ID (A)c Qg (Typ) RoHS High Threshold Voltage At High TemperatureCOMPLIANT 0.009 at VGS = 10 V 40 50 55TO-252DGDrain Connected to TabG D STop ViewSOrdering Information: SUD50N04-

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