SUM120N04-1M7L MOSFET. Datasheet pdf. Equivalent
Type Designator: SUM120N04-1M7L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 375 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 190 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 1652 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm
Package: TO-263
SUM120N04-1M7L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SUM120N04-1M7L Datasheet (PDF)
sum120n04-1m7l.pdf
SUM120N04-1m7Lwww.vishay.comVishay SiliconixN-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) d Qg (TYP.) 100 % Rg and UIS tested0.0017 at VGS = 10 V 12040 190 Material categorization: 0.0020 at VGS = 4.5 V 120For definitions of compliance please see www.vishay.com/doc?99912 TO-263DAPPLICATIONS
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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