All MOSFET. SUM18N25-165 Datasheet

 

SUM18N25-165 Datasheet and Replacement


   Type Designator: SUM18N25-165
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 130 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.165 Ohm
   Package: TO-263
 

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SUM18N25-165 Datasheet (PDF)

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SUM18N25-165

SUM18N25-165Vishay SiliconixN-Channel 250-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) ID (A)rDS(on) () 175 C Junction TemperatureRoHS0.165 at VGS = 10 V 250 18COMPLIANT Low Thermal Resistance PackageDTO-263GG D STop ViewSOrdering Information: SUM18N25-165-E3 (Lead (Pb)-free) N-Channel MOSFETABSOLU

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History: R6009JNJ

Keywords - SUM18N25-165 MOSFET datasheet

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