SUM18N25-165 MOSFET. Datasheet pdf. Equivalent
Type Designator: SUM18N25-165
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 18 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 30 nC
trⓘ - Rise Time: 130 nS
Cossⓘ - Output Capacitance: 160 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.165 Ohm
Package: TO-263
SUM18N25-165 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SUM18N25-165 Datasheet (PDF)
..1. Size:159K vishay
sum18n25-165.pdf
sum18n25-165.pdf
SUM18N25-165Vishay SiliconixN-Channel 250-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) ID (A)rDS(on) () 175 C Junction TemperatureRoHS0.165 at VGS = 10 V 250 18COMPLIANT Low Thermal Resistance PackageDTO-263GG D STop ViewSOrdering Information: SUM18N25-165-E3 (Lead (Pb)-free) N-Channel MOSFETABSOLU
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