All MOSFET. MM109N06K Datasheet

 

MM109N06K MOSFET. Datasheet pdf. Equivalent

Type Designator: MM109N06K

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 109 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 50 nC

Rise Time (tr): 43 nS

Drain-Source Capacitance (Cd): 435 pF

Maximum Drain-Source On-State Resistance (Rds): 0.008 Ohm

Package: TO-220

MM109N06K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MM109N06K Datasheet (PDF)

1.1. mm109n06k.pdf Size:412K _upd

MM109N06K
MM109N06K

MM1 09 N06K Datasheet N-Channel MOSFET Applications: a ● Power Supply VDSS RDS(ON)(MAX) ID ● DC-DC Converters 60V 8mΩ 109A Features: ● Lead Free ● Low RDS(ON) to Minimize Conductive Loss ● Low Gate Charge for Fast Switching Application ● Optimized BVDSS Capability Ordering Information Park Number Package Brand MM109N06K TO-220 MacMic TC=25℃ unless otherwise specifi

Datasheet: PHB95NQ04LT , PHB96NQ03LT , PHD108NQ03LT , PHD14NQ20T , PHD16N03LT , PHD16N03T , PHD18NQ10T , PHD21N06LT , IRFP250 , PHD23NQ10T , PHD34NQ10T , PHD36N03LT , PHD37N06LT , PHD44N06LT , PHD50N06LT , PHD66NQ03LT , PHD77NQ03T .

 
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