SUM52N20-39P PDF and Equivalents Search

 

SUM52N20-39P Specs and Replacement

Type Designator: SUM52N20-39P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 52 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 170 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm

Package: TO-263

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SUM52N20-39P datasheet

 ..1. Size:80K  vishay
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SUM52N20-39P

SUM52N20-39P New Product Vishay Siliconix N-Channel 200-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Qg (Typ) 175 C Junction Temperature 0.038 at VGS = 15 V 52 200 81 100 % Rg and UIS Tested 0.039 at VGS = 10 V 52 APPLICATIONS Power Supply - Primary Side Lighting Industrial D TO-263 G G ... See More ⇒

Detailed specifications: SUM36N20-54P, SUM40N02-12P, SUM40N10-30, SUM40N15-38, SUM45N25-58, SUM47N10-24L, SUM50N06-16L, SUM50P10-42, IRFP250, SUM55P06-19L, SUM60N02-3M9P, SUM60N10-17, SUM65N20-30, SUM70N03-09CP, SUM70N04-07L, SUM75N06-09L, SUM75N15-18P

Keywords - SUM52N20-39P MOSFET specs

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