SUM52N20-39P MOSFET. Datasheet pdf. Equivalent
Type Designator: SUM52N20-39P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 52 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 123 nC
trⓘ - Rise Time: 170 nS
Cossⓘ - Output Capacitance: 400 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
Package: TO-263
SUM52N20-39P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SUM52N20-39P Datasheet (PDF)
..1. Size:80K vishay
sum52n20-39p.pdf
sum52n20-39p.pdf
SUM52N20-39PNew ProductVishay SiliconixN-Channel 200-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A) Qg (Typ) 175 C Junction Temperature0.038 at VGS = 15 V52200 81 100 % Rg and UIS Tested0.039 at VGS = 10 V52APPLICATIONS Power Supply- Primary Side Lighting IndustrialDTO-263GG
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