All MOSFET. SUM55P06-19L Datasheet

 

SUM55P06-19L MOSFET. Datasheet pdf. Equivalent


   Type Designator: SUM55P06-19L
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 55 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 76 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 390 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
   Package: TO-263

 SUM55P06-19L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SUM55P06-19L Datasheet (PDF)

 ..1. Size:127K  vishay
 sum55p06-19l.pdf

SUM55P06-19L SUM55P06-19L

SUM55P06-19LVishay SiliconixP-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)d Qg (Typ.) Material categorization:For definitions of compliance please see0.019 at VGS = - 10 V - 55- 60 76www.vishay.com/doc?999120.025 at VGS = - 4.5 V - 48STO-263GDDG STop View P-Channel MOSFETOrdering

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History: SFG12R12GF

 

 
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