All MOSFET. SUM55P06-19L Datasheet

 

SUM55P06-19L Datasheet and Replacement


   Type Designator: SUM55P06-19L
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 390 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
   Package: TO-263
 

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SUM55P06-19L Datasheet (PDF)

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SUM55P06-19L

SUM55P06-19LVishay SiliconixP-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)d Qg (Typ.) Material categorization:For definitions of compliance please see0.019 at VGS = - 10 V - 55- 60 76www.vishay.com/doc?999120.025 at VGS = - 4.5 V - 48STO-263GDDG STop View P-Channel MOSFETOrdering

Datasheet: SUM40N02-12P , SUM40N10-30 , SUM40N15-38 , SUM45N25-58 , SUM47N10-24L , SUM50N06-16L , SUM50P10-42 , SUM52N20-39P , P0903BDG , SUM60N02-3M9P , SUM60N10-17 , SUM65N20-30 , SUM70N03-09CP , SUM70N04-07L , SUM75N06-09L , SUM75N15-18P , SUM85N03-06P .

History: AP4936GM | SIHFBC30AL | AP2763W-A | UTT6NP10G-S08-R | SIA537EDJ | IXFN20N120 | QM2N7002E3K1

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