SUM55P06-19L PDF and Equivalents Search

 

SUM55P06-19L Specs and Replacement

Type Designator: SUM55P06-19L

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 390 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm

Package: TO-263

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SUM55P06-19L datasheet

 ..1. Size:127K  vishay
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SUM55P06-19L

SUM55P06-19L Vishay Siliconix P-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Material categorization For definitions of compliance please see 0.019 at VGS = - 10 V - 55 - 60 76 www.vishay.com/doc?99912 0.025 at VGS = - 4.5 V - 48 S TO-263 G D D G S Top View P-Channel MOSFET Ordering... See More ⇒

Detailed specifications: SUM40N02-12P, SUM40N10-30, SUM40N15-38, SUM45N25-58, SUM47N10-24L, SUM50N06-16L, SUM50P10-42, SUM52N20-39P, IRF1407, SUM60N02-3M9P, SUM60N10-17, SUM65N20-30, SUM70N03-09CP, SUM70N04-07L, SUM75N06-09L, SUM75N15-18P, SUM85N03-06P

Keywords - SUM55P06-19L MOSFET specs

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