SUM60N10-17 MOSFET. Datasheet pdf. Equivalent
Type Designator: SUM60N10-17
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 60 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 65 nC
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 450 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0165 Ohm
Package: TO-263
SUM60N10-17 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SUM60N10-17 Datasheet (PDF)
sum60n10-17.pdf
SUM60N10-17Vishay SiliconixN-Channel 100 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature 0.0165 at VGS = 10 V60 Low Thermal Resistance Package 1000.0190 at VGS = 6 V56 PWM Optimized for Fast Switching 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/
sum60n10-17.pdf
SUM60N10-17www.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Maximum Junction Temperature0.010 at VGS = 10 V100100 Compliant to RoHS Directive 2002/95/EC0.023 at VGS = 4.5 V85D TO-263G G D S Top ViewS N-Channel MOSFETABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherw
sum60n02.pdf
SUM60N02-3m9PVishay SiliconixN-Channel 20-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A)a 175 C Junction TemperatureRoHS0.0039 at VGS = 10 V60COMPLIANT 100 % Rg Tested200.0052 at VGS = 4.5 V60 100 % UIS TestedAPPLICATIONS OR-ingDTO-263 GDRAIN connected to TAB G D S To
sum60n04-05lt.pdf
SUM60N04-05LTVishay SiliconixN-Channel 40-V (D-S) MOSFET with Sensing DiodeFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETS PlusV(BR)DSS (V) rDS(on) ()ID (A)AvailableTemperature Sensing Diode0.0045 at VGS = 10 V60a 175 C Junction Temperature RoHS*400.0065 at VGS = 4.5 VCOMPLIANT20a Low Thermal Resistance PackageAPPLICATIONSD2PAK-5L Ind
sum60n04-05t.pdf
SUM60N04-05TVishay SiliconixN-Channel 40-V (D-S) MOSFET with Sensing DiodeFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETS Plus V(BR)DSS (V) rDS(on) ()ID (A)AvailableTemperature Sensing Diode0.0054 at VGS = 10 V4060aRoHS* 175 C Junction TemperatureCOMPLIANT Low Thermal Resistance Package2 D PAK-5 DT11 2 3 4 5 D1 D2GT2G D S T 1
sum60n02-3m9p.pdf
SUM60N02-3m9PVishay SiliconixN-Channel 20-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A)a 175 C Junction TemperatureRoHS0.0039 at VGS = 10 V60COMPLIANT 100 % Rg Tested200.0052 at VGS = 4.5 V60 100 % UIS TestedAPPLICATIONS OR-ingDTO-263 GDRAIN connected to TAB G D S To
sum60n04-12lt.pdf
SUM60N04-12LTVishay SiliconixTemperature Sensing MOSFET, N-Channel 40-V (D-S)FEATURESPRODUCT SUMMARY Temperature-Sense Diodes for Thermal ShutdownV(BR)DSS (V) rDS(on) ()ID (A)Available TrenchFET Power MOSFET0.009 at VGS = 10 V 60a40 RoHS* 175 C Maximum Junction Temperature0.012 at VGS = 4.5 V 60COMPLIANT ESD Protected: 2000 VNotes:
sum60n04-06t.pdf
SUM60N04-06TVishay SiliconixN-Channel 40-V (D-S) MOSFET with Sensing DiodeFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETS PlusV(BR)DSS (V) rDS(on) ()ID (A)AvailableTemperature Sensing Diode0.0055 at VGS = 10 V4060aRoHS* 175 C Junction TemperatureCOMPLIANT New Low Thermal Resistance PackageAPPLICATIONSD2PAK-5L IndustrialDT11 2 3 4
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