SUM60N10-17 - описание и поиск аналогов

SUM60N10-17 Vishay Siliconix N-Channel 100 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 0.0165 at VGS = 10 V 60 Low Thermal Resistance Package 100 0.0190 at VGS = 6 V 56 PWM Optimized for Fast Switching 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/

SUM60N10-17 www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Maximum Junction Temperature 0.010 at VGS = 10 V 100 100 Compliant to RoHS Directive 2002/95/EC 0.023 at VGS = 4.5 V 85 D TO-263 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherw

SUM60N02-3m9P Vishay Siliconix N-Channel 20-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( ) ID (A)a 175 C Junction Temperature RoHS 0.0039 at VGS = 10 V 60 COMPLIANT 100 % Rg Tested 20 0.0052 at VGS = 4.5 V 60 100 % UIS Tested APPLICATIONS OR-ing D TO-263 G DRAIN connected to TAB G D S To

SUM60N04-05LT Vishay Siliconix N-Channel 40-V (D-S) MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS Plus V(BR)DSS (V) rDS(on) ( )ID (A) Available Temperature Sensing Diode 0.0045 at VGS = 10 V 60a 175 C Junction Temperature RoHS* 40 0.0065 at VGS = 4.5 V COMPLIANT 20a Low Thermal Resistance Package APPLICATIONS D2PAK-5L Ind

SUM60N04-05T Vishay Siliconix N-Channel 40-V (D-S) MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS Plus V(BR)DSS (V) rDS(on) ( )ID (A) Available Temperature Sensing Diode 0.0054 at VGS = 10 V 40 60a RoHS* 175 C Junction Temperature COMPLIANT Low Thermal Resistance Package 2 D PAK-5 D T1 1 2 3 4 5 D1 D2 G T2 G D S T 1

SUM60N02-3m9P Vishay Siliconix N-Channel 20-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( ) ID (A)a 175 C Junction Temperature RoHS 0.0039 at VGS = 10 V 60 COMPLIANT 100 % Rg Tested 20 0.0052 at VGS = 4.5 V 60 100 % UIS Tested APPLICATIONS OR-ing D TO-263 G DRAIN connected to TAB G D S To

SUM60N04-12LT Vishay Siliconix Temperature Sensing MOSFET, N-Channel 40-V (D-S) FEATURES PRODUCT SUMMARY Temperature-Sense Diodes for Thermal Shutdown V(BR)DSS (V) rDS(on) ( )ID (A) Available TrenchFET Power MOSFET 0.009 at VGS = 10 V 60a 40 RoHS* 175 C Maximum Junction Temperature 0.012 at VGS = 4.5 V 60 COMPLIANT ESD Protected 2000 V Notes

SUM60N04-06T Vishay Siliconix N-Channel 40-V (D-S) MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS Plus V(BR)DSS (V) rDS(on) ( )ID (A) Available Temperature Sensing Diode 0.0055 at VGS = 10 V 40 60a RoHS* 175 C Junction Temperature COMPLIANT New Low Thermal Resistance Package APPLICATIONS D2PAK-5L Industrial D T1 1 2 3 4