SUM65N20-30 PDF and Equivalents Search

 

SUM65N20-30 Specs and Replacement

Type Designator: SUM65N20-30

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 375 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 65 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 220 nS

Cossⓘ - Output Capacitance: 480 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: TO-263

SUM65N20-30 substitution

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SUM65N20-30 datasheet

 ..1. Size:163K  vishay
 sum65n20-30.pdf pdf_icon

SUM65N20-30

SUM65N20-30 Vishay Siliconix N-Channel 200-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) 175 C Junction Temperature RoHS 0.030 at VGS = 10 V 200 65a COMPLIANT Low Thermal Resistance Package 100 % Rg Tested APPLICATIONS Isolated DC/DC Converters D TO-263 G G D S Top View S Ordering Info... See More ⇒

Detailed specifications: SUM45N25-58, SUM47N10-24L, SUM50N06-16L, SUM50P10-42, SUM52N20-39P, SUM55P06-19L, SUM60N02-3M9P, SUM60N10-17, 5N60, SUM70N03-09CP, SUM70N04-07L, SUM75N06-09L, SUM75N15-18P, SUM85N03-06P, SUM85N15-19, SUM90N03-2M2P, SUM90N04-3M3P

Keywords - SUM65N20-30 MOSFET specs

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