All MOSFET. SUP25P10-138 Datasheet

 

SUP25P10-138 Datasheet and Replacement


   Type Designator: SUP25P10-138
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 73.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 16.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.138 Ohm
   Package: TO-220AB
 

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SUP25P10-138 Datasheet (PDF)

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SUP25P10-138

SUP25P10-138Vishay SiliconixP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)c Qg (Typ.) 100 % Rg and UIS Tested0.138 at VGS = - 10 V - 16.3 Material categorization:0.141 at VGS = - 7.5 V - 16.1 24 nCFor definitions of compliance please see- 100www.vishay.com/doc?999120.142 at VGS = - 6 V - 16.

Datasheet: SUM90N06-5M5P , SUM90N08-4M8P , SUM90N08-6M2P , SUM90N08-7M6P , SUM90N10-8M2P , SUM90P10-19 , SUM90P10-19L , SUP18N15-95 , 7N60 , SUP28N15-52 , SUP36N20-54P , SUP40N10-30 , SUP40N25-60 , SUP40P10-43 , SUP45N03-13L , SUP50N03-5M1P , SUP50N10-21P .

History: SM6012NSUB

Keywords - SUP25P10-138 MOSFET datasheet

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