SUP25P10-138 MOSFET Datasheet: P-Ch, 100V, 16.3A. Full specification with pinout and replacement list

SUP25P10-138 Specs and Replacement

Type Designator: SUP25P10-138

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 73.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.138 Ohm

Package: TO-220AB

SUP25P10-138 substitution

- MOSFET ⓘ Cross-Reference Search

SUP25P10-138 datasheet

..1. Size:128K vishay
sup25p10-138.pdf pdf_icon

SUP25P10-138 Vishay Siliconix P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)c Qg (Typ.) 100 % Rg and UIS Tested 0.138 at VGS = - 10 V - 16.3 Material categorization 0.141 at VGS = - 7.5 V - 16.1 24 nC For definitions of compliance please see - 100 www.vishay.com/doc?99912 0.142 at VGS = - 6 V - 16.... See More ⇒

Detailed specifications: SUM90N06-5M5P, SUM90N08-4M8P, SUM90N08-6M2P, SUM90N08-7M6P, SUM90N10-8M2P, SUM90P10-19, SUM90P10-19L, SUP18N15-95, 7N60, SUP28N15-52, SUP36N20-54P, SUP40N10-30, SUP40N25-60, SUP40P10-43, SUP45N03-13L, SUP50N03-5M1P, SUP50N10-21P