SUP60N06-12P MOSFET Datasheet: N-Ch, 60V, 60A. Full specification with pinout and replacement list

SUP60N06-12P Specs and Replacement

Type Designator: SUP60N06-12P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 310 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: TO-220AB

SUP60N06-12P substitution

- MOSFET ⓘ Cross-Reference Search

SUP60N06-12P datasheet

..1. Size:164K vishay
sup60n06-12p.pdf pdf_icon

... See More ⇒

4.1. Size:100K vishay
sup60n06-18 sub60n06-18.pdf pdf_icon

SUP/SUB60N06-18 Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.018 60 TO-220AB D TO-263 DRAIN connected to TAB G G D S G D S Top View Top View S SUB60N06-18 SUP60N06-18 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V V Gate-Sourc... See More ⇒

6.1. Size:162K vishay
sup60n06.pdf pdf_icon

... See More ⇒

7.1. Size:171K vishay
sup60n02.pdf pdf_icon

SUP60N02-4m5P Vishay Siliconix N-Channel 20-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( ) ID (A)a 175 C Junction Temperature RoHS 0.0045 at VGS = 10 V 60 100 % Rg Tested COMPLIANT 20 0.0065 at VGS = 4.5 V 60 100 % UIS Tested APPLICATIONS OR-ing TO-220AB D DRAIN connected to TAB G G D S Top ... See More ⇒