SUP60N10-18P MOSFET Datasheet: N-Ch, 100V, 60A. Full specification with pinout and replacement list

SUP60N10-18P Specs and Replacement

Type Designator: SUP60N10-18P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 230 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0183 Ohm

Package: TO-220AB

SUP60N10-18P substitution

- MOSFET ⓘ Cross-Reference Search

SUP60N10-18P datasheet

..1. Size:176K vishay
sup60n10-18p.pdf pdf_icon

SUP60N10-18P Vishay Siliconix N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.0183 at VGS = 10 V 60 100 48 Compliant to RoHS Directive 2002/95/EC 0.023 at VGS = 8.0 V 53 APPLICATIONS Industrial Power Supply TO-220AB D G G D S S Top View Ordering Inf... See More ⇒

4.1. Size:48K vishay
sup60n10-16l.pdf pdf_icon

SUP60N10-16L Vishay Siliconix N-Channel 100-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET V(BR)DSS (V) rDS(on) (W) ID (A) D 175_C Junction Temperature 0.016 @ VGS = 10 V 60 D PWM Optimized 100 100 0.018 @ VGS = 4.5 V 56 APPLICATIONS D DC/DC Primary Side Switch D TO-220AB G DRAIN connected to TAB G D S S Top View N-Channel MOSFET SUP60N10-16L ABS... See More ⇒

6.1. Size:175K vishay
sup60n10.pdf pdf_icon