All MOSFET. SUP65P04-15 Datasheet

 

SUP65P04-15 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SUP65P04-15
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 65 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 85 nC
   trⓘ - Rise Time: 380 nS
   Cossⓘ - Output Capacitance: 640 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TO-263

 SUP65P04-15 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SUP65P04-15 Datasheet (PDF)

 ..1. Size:82K  vishay
 sup65p04-15 sub65p04-15.pdf

SUP65P04-15 SUP65P04-15

SUP/SUB65P04-15New ProductVishay SiliconixP-Channel 40-V (D-S) 175_C MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.015 @ VGS = 10 V6540400.023 @ VGS = 4.5 V 50STO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SDSUB65P04-15Top ViewP-Channel MOSFETSUP65P04-15ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Param

 ..2. Size:163K  vishay
 sub65p04-15 sup65p04-15.pdf

SUP65P04-15 SUP65P04-15

SUP/SUB65P04-15Vishay SiliconixP-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Compliant to RoHS Directive 2002/95/EC0.015 at VGS = - 10 V - 65- 400.023 at VGS = - 4.5 V - 50STO-263GDRAIN connected to TABG D STop ViewG D SSUB65P04-15Top ViewDSUP65P04-15P-Channel MOSFETOrderin

 7.1. Size:69K  1
 sup65p06-20 sub65p06-20.pdf

SUP65P04-15 SUP65P04-15

SUP/SUB65P06-20P-Channel Enhancement-Mode TransistorsProduct SummaryV(BR)DSS (V) rDS(on) (W) ID (A)60 0.020 65aSTO 220ABTO 263GDRAIN connected to TABG D STop ViewGD SDSUB65P06 20Top ViewP Channel MOSFETSUP65P06 20Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)Parameter Symbol Limit UnitGate-Source Voltage VGS "20 VTC = 25_C 65aCon

 7.2. Size:54K  vishay
 sup65p06-20 sub65p06-20.pdf

SUP65P04-15 SUP65P04-15

SUP/SUB65P06-20Vishay SiliconixP-Channel 60-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)60 0.020 65aTO-220ABSTO-263GDRAIN connected to TABG D S G D STop ViewTop ViewDSUB65P06-20SUP65P06-20 P-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitGate-Source Voltage VGS "20 VTC = 25_

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IXTP08N120P | 2N6793LCC4

 

 
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