SUP65P04-15 - параметры транзистора MOSFET, его аналоги, datasheet

SUP65P04-15 Datasheet (PDF)

..1. Size:82K vishay
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SUP/SUB65P04-15New ProductVishay SiliconixP-Channel 40-V (D-S) 175_C MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.015 @ VGS = 10 V6540400.023 @ VGS = 4.5 V 50STO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SDSUB65P04-15Top ViewP-Channel MOSFETSUP65P04-15ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Param

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SUP/SUB65P04-15Vishay SiliconixP-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Compliant to RoHS Directive 2002/95/EC0.015 at VGS = - 10 V - 65- 400.023 at VGS = - 4.5 V - 50STO-263GDRAIN connected to TABG D STop ViewG D SSUB65P04-15Top ViewDSUP65P04-15P-Channel MOSFETOrderin

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SUP/SUB65P06-20P-Channel Enhancement-Mode TransistorsProduct SummaryV(BR)DSS (V) rDS(on) (W) ID (A)60 0.020 65aSTO 220ABTO 263GDRAIN connected to TABG D STop ViewGD SDSUB65P06 20Top ViewP Channel MOSFETSUP65P06 20Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)Parameter Symbol Limit UnitGate-Source Voltage VGS "20 VTC = 25_C 65aCon

7.2. Size:54K vishay
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SUP/SUB65P06-20Vishay SiliconixP-Channel 60-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)60 0.020 65aTO-220ABSTO-263GDRAIN connected to TABG D S G D STop ViewTop ViewDSUB65P06-20SUP65P06-20 P-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitGate-Source Voltage VGS "20 VTC = 25_

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