All MOSFET. 2SJ541 Datasheet

 

2SJ541 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SJ541

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 15 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 850 pF

Maximum Drain-Source On-State Resistance (Rds): 0.105 Ohm

Package: TO220AB

2SJ541 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SJ541 Datasheet (PDF)

1.1. rej03g0888 2sj541ds.pdf Size:101K _renesas

2SJ541
2SJ541

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.2. 2sj541.pdf Size:88K _renesas

2SJ541
2SJ541

2SJ541 Silicon P Channel MOS FET REJ03G0888-0400 (Previous: ADE-208-590B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.075 ? typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D 1. Gate G 2. Drain (Flange) 3. Sour

 5.1. 2sj549.pdf Size:97K _renesas

2SJ541
2SJ541

2SJ549(L), 2SJ549(S) Silicon P Channel MOS FET REJ03G0896-0400 Rev.4.00 Jun 05, 2006 Description High speed power switching Features Low on-resistance RDS (on) = 0.11 ? typ. Low drive current 4 V gate drive devices High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (L) ) (Package name: LDPAK (

5.2. rej03g0891 2sj544ds.pdf Size:101K _renesas

2SJ541
2SJ541

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

 5.3. 2sj545.pdf Size:90K _renesas

2SJ541
2SJ541

2SJ545 Silicon P Channel MOS FET REJ03G0892-0400 Rev.4.00 Jun 05, 2006 Description High speed power switching Features Low on-resistance RDS (on) = 0.11 ? typ. Low drive current 4 V gate drive devices High speed switching Outline RENESAS Package code: PRSS0003AE-A (Package name: TO-220CFM) D 1. Gate G 2. Drain 3. Source 1 2 3 S Rev.4.00 Jun 05, 2006

5.4. rej03g0890 2sj543ds.pdf Size:101K _renesas

2SJ541
2SJ541

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

 5.5. 2sj542.pdf Size:87K _renesas

2SJ541
2SJ541

2SJ542 Silicon P Channel MOS FET REJ03G0889-0400 (Previous: ADE-208-591B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.050 ? typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D 1. Gate G 2. Drain (Flange) 3. Sour

5.6. rej03g0896 2sj549lsds.pdf Size:110K _renesas

2SJ541
2SJ541

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.7. 2sj543.pdf Size:88K _renesas

2SJ541
2SJ541

2SJ543 Silicon P Channel MOS FET REJ03G0890-0400 (Previous: ADE-208-652B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.042 ? typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D 1. Gate G 2. Drain (Flange) 3. Sour

5.8. rej03g0889 2sj542ds.pdf Size:101K _renesas

2SJ541
2SJ541

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.9. 2sj540.pdf Size:90K _renesas

2SJ541
2SJ541

2SJ540 Silicon P Channel MOS FET REJ03G0887-0400 Rev.4.00 Jun 05, 2006 Description High speed power switching Features Low on-resistance RDS (on) = 0.11 ? typ. Low drive current 4 V gate drive devices High speed switching Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D 1. Gate G 2. Drain (Flange) 3. Source 1 2 3 S Rev.4.00 Jun 05

5.10. rej03g0887 2sj540ds.pdf Size:103K _renesas

2SJ541
2SJ541

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.11. 2sj544.pdf Size:88K _renesas

2SJ541
2SJ541

2SJ544 Silicon P Channel MOS FET REJ03G0891-0300 (Previous: ADE-208-648A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.028 ? typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D 1. Gate G 2. Drain (Flange) 3. Sour

5.12. 2sj546.pdf Size:88K _renesas

2SJ541
2SJ541

2SJ546 Silicon P Channel MOS FET REJ03G0893-0300 (Previous: ADE-208-638A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.075 ? typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code: PRSS0003AE-A (Package name: TO-220CFM) D 1. Gate G 2. Drain 3. Source 1

5.13. rej03g0894 2sj547ds.pdf Size:102K _renesas

2SJ541
2SJ541

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.14. rej03g0895 2sj548ds.pdf Size:102K _renesas

2SJ541
2SJ541

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.15. 2sj547.pdf Size:88K _renesas

2SJ541
2SJ541

2SJ547 Silicon P Channel MOS FET REJ03G0894-0300 (Previous: ADE-208-658A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.16 ? typ. 4 V gate drive devices High speed switching Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D 1. Gate G 2. Drain 3. Source 1 2 3 S Rev.3.00 Sep 07, 20

Datasheet: 2SJ530 , 2SJ531 , 2SJ532 , 2SJ533 , 2SJ534 , 2SJ535 , 2SJ539 , 2SJ540 , 2SK117 , 2SJ542 , 2SJ543 , 2SJ544 , 2SJ545 , 2SJ546 , 2SJ547 , 2SJ548 , 2SJ549 .

 
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