All MOSFET. SUP90N08-4M8P Datasheet

 

SUP90N08-4M8P MOSFET. Datasheet pdf. Equivalent

Type Designator: SUP90N08-4M8P

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 300 W

Maximum Drain-Source Voltage |Vds|: 75 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 90 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 105 nC

Rise Time (tr): 17 nS

Drain-Source Capacitance (Cd): 571 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0048 Ohm

Package: TO-220AB

SUP90N08-4M8P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SUP90N08-4M8P Datasheet (PDF)

0.1. sup90n08-4m8p.pdf Size:156K _vishay

SUP90N08-4M8P
SUP90N08-4M8P

SUP90N08-4m8PVishay SiliconixN-Channel 75 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () ID (A) Qg (Typ) 175 C Junction TemperatureRoHSCOMPLIANT 0.0048 at VGS = 10 V 100 % UIS Tested90d75 1050.006 at VGS = 8 V Compliant to RoHS Directive 2002/95/EC90dAPPLICATIONS Power Supply- Half-BridgeTO-220AB- S

5.1. sup90n08-7m7p.pdf Size:176K _vishay

SUP90N08-4M8P
SUP90N08-4M8P

SUP90N08-7m7PVishay SiliconixN-Channel 75-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSVDS (V) RDS(on) () ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.0077 at VGS = 10 V75 RoHS90d 69COMPLIANTAPPLICATIONS Synchronous RectificationTO-220ABD DRAIN connected to TABG G D STop ViewS Ordering Information: SUP90N08-7m7P-E3 (Lead (P

5.2. sup90n08-6m8p.pdf Size:172K _vishay

SUP90N08-4M8P
SUP90N08-4M8P

SUP90N08-6m8PVishay SiliconixN-Channel 75-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () ID (A) Qg (Typ.) 175 C Junction Temperature75 0.0068 at VGS = 10 V RoHS90d 75 100 % Rg and UIS TestedCOMPLIANT Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power Supply- Secondary Synchronous RectificationTO-220

 5.3. sup90n08-8m2p.pdf Size:180K _vishay

SUP90N08-4M8P
SUP90N08-4M8P

SUP90N08-8m2PVishay SiliconixN-Channel 75 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) RDS(on) () ID (A) Qg (Typ) 175 C Junction Temperature75 0.0082 at VGS = 10 V 100 % Rg and UIS Tested90d 58 Material categorization:For definitions of compliance please seewww.vishay.com/doc?99912TO-220AB APPLICATIONS Power S

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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