All MOSFET. SUP90N08-8M2P Datasheet

 

SUP90N08-8M2P MOSFET. Datasheet pdf. Equivalent


   Type Designator: SUP90N08-8M2P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.8 V
   |Id|ⓘ - Maximum Drain Current: 90 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 58 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 470 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0082 Ohm
   Package: TO-220AB

 SUP90N08-8M2P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SUP90N08-8M2P Datasheet (PDF)

 ..1. Size:180K  vishay
 sup90n08-8m2p.pdf

SUP90N08-8M2P SUP90N08-8M2P

SUP90N08-8m2PVishay SiliconixN-Channel 75 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) RDS(on) () ID (A) Qg (Typ) 175 C Junction Temperature75 0.0082 at VGS = 10 V 100 % Rg and UIS Tested90d 58 Material categorization:For definitions of compliance please seewww.vishay.com/doc?99912TO-220AB APPLICATIONS Power S

 5.1. Size:172K  vishay
 sup90n08-6m8p.pdf

SUP90N08-8M2P SUP90N08-8M2P

SUP90N08-6m8PVishay SiliconixN-Channel 75-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () ID (A) Qg (Typ.) 175 C Junction Temperature75 0.0068 at VGS = 10 V RoHS90d 75 100 % Rg and UIS TestedCOMPLIANT Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power Supply- Secondary Synchronous RectificationTO-220

 5.2. Size:156K  vishay
 sup90n08-4m8p.pdf

SUP90N08-8M2P SUP90N08-8M2P

SUP90N08-4m8PVishay SiliconixN-Channel 75 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () ID (A) Qg (Typ) 175 C Junction TemperatureRoHSCOMPLIANT 0.0048 at VGS = 10 V 100 % UIS Tested90d75 1050.006 at VGS = 8 V Compliant to RoHS Directive 2002/95/EC90dAPPLICATIONS Power Supply- Half-BridgeTO-220AB- S

 5.3. Size:176K  vishay
 sup90n08-7m7p.pdf

SUP90N08-8M2P SUP90N08-8M2P

SUP90N08-7m7PVishay SiliconixN-Channel 75-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSVDS (V) RDS(on) () ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.0077 at VGS = 10 V75 RoHS90d 69COMPLIANTAPPLICATIONS Synchronous RectificationTO-220ABD DRAIN connected to TABG G D STop ViewS Ordering Information: SUP90N08-7m7P-E3 (Lead (P

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: AOI7N60

 

 
Back to Top