SUP90N08-8M2P - аналоги, параметры транзистора

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..1. Size:180K vishay
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SUP90N08-8m2P Vishay Siliconix N-Channel 75 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) RDS(on) ( ) ID (A) Qg (Typ) 175 C Junction Temperature 75 0.0082 at VGS = 10 V 100 % Rg and UIS Tested 90d 58 Material categorization For definitions of compliance please see www.vishay.com/doc?99912 TO-220AB APPLICATIONS Power S

5.1. Size:172K vishay
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SUP90N08-6m8P Vishay Siliconix N-Channel 75-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) 175 C Junction Temperature 75 0.0068 at VGS = 10 V RoHS 90d 75 100 % Rg and UIS Tested COMPLIANT Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power Supply - Secondary Synchronous Rectification TO-220

5.2. Size:156K vishay
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SUP90N08-4m8P Vishay Siliconix N-Channel 75 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 175 C Junction Temperature RoHS COMPLIANT 0.0048 at VGS = 10 V 100 % UIS Tested 90d 75 105 0.006 at VGS = 8 V Compliant to RoHS Directive 2002/95/EC 90d APPLICATIONS Power Supply - Half-Bridge TO-220AB - S

5.3. Size:176K vishay
sup90n08-7m7p.pdf pdf_icon

SUP90N08-7m7P Vishay Siliconix N-Channel 75-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.0077 at VGS = 10 V 75 RoHS 90d 69 COMPLIANT APPLICATIONS Synchronous Rectification TO-220AB D DRAIN connected to TAB G G D S Top View S Ordering Information SUP90N08-7m7P-E3 (Lead (P

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