All MOSFET. SUV85N10-10 Datasheet

 

SUV85N10-10 Datasheet and Replacement


   Type Designator: SUV85N10-10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 85 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 665 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: TO-262
 

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SUV85N10-10 Datasheet (PDF)

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SUV85N10-10

SUV85N10-10New ProductVishay SiliconixN-Channel 100-V (D-S) 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETV(BR)DSS (V) rDS(on) (W) ID (A)D 175_C Junction Temperature0.0105 @ VGS = 10 Va100 85 a100 85 APPLICATIONS0.012 @ VGS = 4.5 VD DC/DC Primary Side SwitchDTO-2621 2 3GG D SSTop ViewSUV85N10-10 N-Channel MOSFETABSOLUTE MAXIMUM RATINGS

Datasheet: SUP90N08-6M8P , SUP90N08-7M7P , SUP90N08-8M2P , SUP90N10-8M8P , SUP90N15-18P , SUP90P06-09L , SUU09N10-76P , SUU10P10-195 , IRF9540 , SM1105NSK , SM1105NSUB , SM1108NSF , SM1110NSA , SM1110NSC , SM1A01NFS , SM1A01NSF , SM1A01NSFP .

History: STR2N2VH5

Keywords - SUV85N10-10 MOSFET datasheet

 SUV85N10-10 cross reference
 SUV85N10-10 equivalent finder
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