SUV85N10-10 PDF and Equivalents Search

 

SUV85N10-10 Specs and Replacement

Type Designator: SUV85N10-10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 85 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 90 nS

Cossⓘ - Output Capacitance: 665 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm

Package: TO-262

SUV85N10-10 substitution

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SUV85N10-10 datasheet

 ..1. Size:50K  vishay
 suv85n10-10 suv85n10.pdf pdf_icon

SUV85N10-10

SUV85N10-10 New Product Vishay Siliconix N-Channel 100-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET V(BR)DSS (V) rDS(on) (W) ID (A) D 175_C Junction Temperature 0.0105 @ VGS = 10 V a 100 85 a 100 85 APPLICATIONS 0.012 @ VGS = 4.5 V D DC/DC Primary Side Switch D TO-262 1 2 3 G G D S S Top View SUV85N10-10 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS... See More ⇒

Detailed specifications: SUP90N08-6M8P, SUP90N08-7M7P, SUP90N08-8M2P, SUP90N10-8M8P, SUP90N15-18P, SUP90P06-09L, SUU09N10-76P, SUU10P10-195, 2N7000, SM1105NSK, SM1105NSUB, SM1108NSF, SM1110NSA, SM1110NSC, SM1A01NFS, SM1A01NSF, SM1A01NSFP

Keywords - SUV85N10-10 MOSFET specs

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