All MOSFET. MMD60R360PRH Datasheet

 

MMD60R360PRH MOSFET. Datasheet pdf. Equivalent


   Type Designator: MMD60R360PRH
   Marking Code: 60R360P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 28 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 670 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: TO-252

 MMD60R360PRH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MMD60R360PRH Datasheet (PDF)

 ..1. Size:1263K  magnachip
 mmd60r360prh.pdf

MMD60R360PRH MMD60R360PRH

MMD60R360P Datasheet MMD60R360P 600V 0.38 N-channel MOSFET Description MMD60R360P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

 ..2. Size:309K  inchange semiconductor
 mmd60r360prh.pdf

MMD60R360PRH MMD60R360PRH

isc N-Channel MOSFET Transistor MMD60R360PRHFEATURESDrain Current : I = 11A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.38(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

 4.1. Size:278K  inchange semiconductor
 mmd60r360p.pdf

MMD60R360PRH MMD60R360PRH

isc N-Channel MOSFET Transistor MMD60R360PFEATURESStatic drain-source on-resistance:RDS(on)0.38100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV Gate-Source Voltage 30

 5.1. Size:1563K  magnachip
 mmd60r360qrh.pdf

MMD60R360PRH MMD60R360PRH

MMD60R360Q Datasheet MMD60R360Q 600V 0.36 N-channel MOSFET Description MMD60R360Q is power MOSFET using Magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

 5.2. Size:310K  inchange semiconductor
 mmd60r360qrh.pdf

MMD60R360PRH MMD60R360PRH

isc N-Channel MOSFET Transistor MMD60R360QRHFEATURESDrain Current : I = 11A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.36(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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