Справочник MOSFET. MMD60R360PRH

 

MMD60R360PRH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MMD60R360PRH
   Маркировка: 60R360P
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 83 W
   Предельно допустимое напряжение сток-исток |Uds|: 600 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 11 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 28 nC
   Время нарастания (tr): 40 ns
   Выходная емкость (Cd): 670 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.38 Ohm
   Тип корпуса: TO-252

 Аналог (замена) для MMD60R360PRH

 

 

MMD60R360PRH Datasheet (PDF)

 ..1. Size:1263K  magnachip
mmd60r360prh.pdf

MMD60R360PRH MMD60R360PRH

MMD60R360P Datasheet MMD60R360P 600V 0.38 N-channel MOSFET Description MMD60R360P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

 ..2. Size:309K  inchange semiconductor
mmd60r360prh.pdf

MMD60R360PRH MMD60R360PRH

isc N-Channel MOSFET Transistor MMD60R360PRHFEATURESDrain Current : I = 11A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.38(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

 4.1. Size:278K  inchange semiconductor
mmd60r360p.pdf

MMD60R360PRH MMD60R360PRH

isc N-Channel MOSFET Transistor MMD60R360PFEATURESStatic drain-source on-resistance:RDS(on)0.38100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV Gate-Source Voltage 30

 5.1. Size:1563K  magnachip
mmd60r360qrh.pdf

MMD60R360PRH MMD60R360PRH

MMD60R360Q Datasheet MMD60R360Q 600V 0.36 N-channel MOSFET Description MMD60R360Q is power MOSFET using Magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

 5.2. Size:310K  inchange semiconductor
mmd60r360qrh.pdf

MMD60R360PRH MMD60R360PRH

isc N-Channel MOSFET Transistor MMD60R360QRHFEATURESDrain Current : I = 11A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.36(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

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