MMFT2406T1
MOSFET. Datasheet pdf. Equivalent
Type Designator: MMFT2406T1
Marking Code: T2406
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 240
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 0.7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Cossⓘ -
Output Capacitance: 50
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 6
Ohm
Package:
SOT-223
MMFT2406T1
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MMFT2406T1
Datasheet (PDF)
..1. Size:125K onsemi
mmft2406t1.pdf
MMFT2406T1Power MOSFET700 mA, 240 V, N-Channel, SOT-223This Power MOSFET is designed for high speed, low loss powerswitching applications such as switching regulators, converters,solenoid and relay drivers. The device is housed in the SOT-223http://onsemi.compackage which is designed for medium power surface mountapplications. 700 mA, 240 V Silicon Gate for Fast Switching S
0.1. Size:90K motorola
mmft2406t1rev1dx.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT2406T1/DMMFT2406T1Medium Power Field EffectMotorola Preferred DeviceTransistorNChannel Enhancement ModeMEDIUM POWERSilicon Gate TMOS EFETTMOS FETSOT223 for Surface Mount700 mA240 VOLTSThis TMOS medium power field effect transistor is designed forRDS(on) = 6.0 OHMhigh speed, low loss power
9.1. Size:250K motorola
mmft2n02el.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT2N02EL/DMedium Power Field Effect TransistorMMFT2N02ELNChannel Enhancement ModeMotorola Preferred DeviceSilicon Gate TMOS EFETtSOT223 for Surface MountMEDIUM POWERThis advanced EFET is a TMOS Medium Power MOSFETLOGIC LEVEL TMOS FETdesigned to withstand high energy in the avalanche and commuta-1
9.2. Size:248K motorola
mmft2955e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT2955E/DMedium Power Field Effect TransistorMMFT2955EPChannel Enhancement ModeMotorola Preferred DeviceSilicon Gate TMOS EFETtSOT223 for Surface MountTMOS MEDIUM POWER FETThis advanced EFET is a TMOS medium power MOSFET1.2 AMPdesigned to withstand high energy in the avalanche and commuta-60 VOLT
9.3. Size:178K motorola
mmft2955erev4.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT2955E/DMedium Power Field Effect TransistorMMFT2955EPChannel Enhancement ModeMotorola Preferred DeviceSilicon Gate TMOS EFETtSOT223 for Surface MountTMOS MEDIUM POWER FETThis advanced EFET is a TMOS medium power MOSFET1.2 AMPdesigned to withstand high energy in the avalanche and commuta-60 VOLT
9.4. Size:139K motorola
mmft2n25erev0.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT2N25E/DProduct PreviewMMFT2N25ETMOS E-FETHigh Energy Power FETNChannel EnhancementMode Silicon GateTMOS POWER FET2.0 AMPERESThis advanced high voltage TMOS EFET is designed to250 VOLTSwithstand high energy in the avalanche mode and switch efficiently.RDS(on) = 3.5 WThis new high energy device
9.5. Size:143K motorola
mmft2n25e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT2N25E/DProduct PreviewMMFT2N25ETMOS E-FETHigh Energy Power FETNChannel EnhancementMode Silicon GateTMOS POWER FET2.0 AMPERESThis advanced high voltage TMOS EFET is designed to250 VOLTSwithstand high energy in the avalanche mode and switch efficiently.RDS(on) = 3.5 WThis new high energy device
9.6. Size:113K onsemi
mmft2955et1.pdf
MMFT2955EPreferred DevicePower MOSFET1 Amp, 60 VoltsPChannel SOT223This Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. This new energy efficient devicehttp://onsemi.comalso offers a draintosource diode with a fast recovery time.Designed for low voltage, high speed switching applications in power1 AMPEREsupplies, convert
9.7. Size:114K onsemi
mmft2n02elt1.pdf
MMFT2N02ELPreferred DevicePower MOSFET2 Amps, 20 VoltsNChannel SOT223This Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. This device is also designed withhttp://onsemi.coma low threshold voltage so it is fully enhanced with 5 Volts. This newenergy efficient device also offers a draintosource diode with a fast2 AMPERESre
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