MMFT5P03HDT1
MOSFET. Datasheet pdf. Equivalent
Type Designator: MMFT5P03HDT1
Marking Code: 5P03H
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 3.13
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 3.7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 17
nC
trⓘ - Rise Time: 24
nS
Cossⓘ -
Output Capacitance: 220
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1
Ohm
Package:
SOT-223
MMFT5P03HDT1
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MMFT5P03HDT1
Datasheet (PDF)
..1. Size:234K onsemi
mmft5p03hdt1.pdf
MMFT5P03HDPreferred DevicePower MOSFET5 Amps, 30 VoltsP-Channel SOT-223This miniature surface mount MOSFET features ultra low RDS(on)and true logic level performance. It is capable of withstanding highhttp://onsemi.comenergy in the avalanche and commutation modes and thedrain-to-source diode has a very low reverse recovery time.5 AMPERESMMFT5P03HD devices are designed for
4.1. Size:203K motorola
mmft5p03hd.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT5P03HD/DDesigner's Data SheetMMFT5P03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS P-ChannelField Effect TransistorTMOS MEDIUMPOWER FETMMFT5P03HD is an advanced power MOSFET which utilizesMotorolas High Cell Density HDTMOS process. This miniature 5.2 AMPERESsurface mount MOSFET f
4.2. Size:198K motorola
mmft5p03hdrev2.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMFT5P03HD/DDesigner's Data SheetMMFT5P03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS P-ChannelField Effect TransistorTMOS MEDIUMPOWER FETMMFT5P03HD is an advanced power MOSFET which utilizesMotorolas High Cell Density HDTMOS process. This miniature 5.2 AMPERESsurface mount MOSFET f
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