MMFT65R195PTH
MOSFET. Datasheet pdf. Equivalent
Type Designator: MMFT65R195PTH
Marking Code: T65R195P
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 34
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 20
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 53
nC
trⓘ - Rise Time: 75
nS
Cossⓘ -
Output Capacitance: 1425
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.195
Ohm
Package:
TO-220F
MMFT65R195PTH
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MMFT65R195PTH
Datasheet (PDF)
..1. Size:1238K magnachip
mmft65r195pth.pdf 
MMFT65R195P Datasheet MMFT65R195P 650V 0.195 N-channel MOSFET Description MMFT65R195P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well
9.1. Size:78K motorola
mmft6n03hd.pdf
MOTOROLAOrder this document throughSEMICONDUCTOR TECHNICAL DATAPower Products MarketingProduct PreviewMMFT6N03HDHDTMOS Single N-ChannelField Effect TransistorMedium Power Surface Mount ProductsTMOS POWER FETThese medium power SOT223 devices are an advanced series6.0 AMPERESof power MOSFETs which utilize Motorolas High Cell Density30 VOLTSHDTMOS process.
9.2. Size:74K motorola
mmft6n03hdrev0.pdf
MOTOROLAOrder this document throughSEMICONDUCTOR TECHNICAL DATAPower Products MarketingProduct PreviewMMFT6N03HDHDTMOS Single N-ChannelField Effect TransistorMedium Power Surface Mount ProductsTMOS POWER FETThese medium power SOT223 devices are an advanced series6.0 AMPERESof power MOSFETs which utilize Motorolas High Cell Density30 VOLTSHDTMOS process.
9.3. Size:1291K magnachip
mmft60r115pcth.pdf
MMFT60R115PC Datasheet MMFT60R115PC 600V 0.115 N-channel MOSFET Description MMFT60R115PC is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as we
9.4. Size:1162K magnachip
mmft60r290pth.pdf
MMFT60R290P Datasheet MMFT60R290P 600V 0.29 N-channel MOSFET Description MMFT60R290P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well a
9.5. Size:1413K magnachip
mmft60r195pth.pdf
MMFT60R195P Datasheet MMFT60R195P 600V 0.195 N-channel MOSFET Description MMFT60R195P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well
9.6. Size:1053K magnachip
mmft60r290pcth.pdf
MMFT60R290PC Datasheet MMFT60R290PC 600V 0.29 N-channel MOSFET Description MMFT60R290PC is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as wel
9.7. Size:1295K magnachip
mmft60r195pcth.pdf
MMFT60R195PC Datasheet MMFT60R195PC 600V 0.195 N-channel MOSFET Description MMFT60R195PC is power MOSFET using Magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as we
9.8. Size:1068K magnachip
mmft60r380pcth.pdf
MMFT60R380PC Datasheet MMFT60R380PC 600V 0.38 N-channel MOSFET Description MMFT60R380PC is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as wel
9.9. Size:1300K magnachip
mmft60r380pth.pdf
MMFT60R380P Datasheet MMFT60R380P 600V 0.38 N-channel MOSFET Description MMFT60R380P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well a
9.10. Size:279K inchange semiconductor
mmft60r115pcth.pdf
isc N-Channel MOSFET Transistor MMFT60R115PCTHFEATURESDrain Current : I = 33A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.115(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand
9.11. Size:279K inchange semiconductor
mmft60r290pth.pdf
isc N-Channel MOSFET Transistor MMFT60R290PTHFEATURESDrain Current : I = 13A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.29(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s
9.12. Size:279K inchange semiconductor
mmft60r195pth.pdf
isc N-Channel MOSFET Transistor MMFT60R195PTHFEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.195(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand
9.13. Size:279K inchange semiconductor
mmft60r290pcth.pdf
isc N-Channel MOSFET Transistor MMFT60R290PCTHFEATURESDrain Current : I = 13A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.29(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand
9.14. Size:279K inchange semiconductor
mmft60r195pcth.pdf
isc N-Channel MOSFET Transistor MMFT60R195PCTHFEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.195(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand
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