MMFT65R195PTH - описание и поиск аналогов

 ..1. Size:1238K  magnachip
 mmft65r195pth.pdf 

MMFT65R195P Datasheet MMFT65R195P 650V 0.195 N-channel MOSFET Description MMFT65R195P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well

 9.1. Size:78K  motorola
 mmft6n03hd.pdf 

MOTOROLA Order this document through SEMICONDUCTOR TECHNICAL DATA Power Products Marketing Product Preview MMFT6N03HD HDTMOS Single N-Channel Field Effect Transistor Medium Power Surface Mount Products TMOS POWER FET These medium power SOT 223 devices are an advanced series 6.0 AMPERES of power MOSFETs which utilize Motorola s High Cell Density 30 VOLTS HDTMOS process.

 9.2. Size:74K  motorola
 mmft6n03hdrev0.pdf 

MOTOROLA Order this document through SEMICONDUCTOR TECHNICAL DATA Power Products Marketing Product Preview MMFT6N03HD HDTMOS Single N-Channel Field Effect Transistor Medium Power Surface Mount Products TMOS POWER FET These medium power SOT 223 devices are an advanced series 6.0 AMPERES of power MOSFETs which utilize Motorola s High Cell Density 30 VOLTS HDTMOS process.

 9.3. Size:1291K  magnachip
 mmft60r115pcth.pdf 

MMFT60R115PC Datasheet MMFT60R115PC 600V 0.115 N-channel MOSFET Description MMFT60R115PC is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as we

 9.4. Size:1162K  magnachip
 mmft60r290pth.pdf 

MMFT60R290P Datasheet MMFT60R290P 600V 0.29 N-channel MOSFET Description MMFT60R290P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well a

 9.5. Size:1413K  magnachip
 mmft60r195pth.pdf 

MMFT60R195P Datasheet MMFT60R195P 600V 0.195 N-channel MOSFET Description MMFT60R195P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well

 9.6. Size:1053K  magnachip
 mmft60r290pcth.pdf 

MMFT60R290PC Datasheet MMFT60R290PC 600V 0.29 N-channel MOSFET Description MMFT60R290PC is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as wel

 9.7. Size:1295K  magnachip
 mmft60r195pcth.pdf 

MMFT60R195PC Datasheet MMFT60R195PC 600V 0.195 N-channel MOSFET Description MMFT60R195PC is power MOSFET using Magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as we

 9.8. Size:1068K  magnachip
 mmft60r380pcth.pdf 

MMFT60R380PC Datasheet MMFT60R380PC 600V 0.38 N-channel MOSFET Description MMFT60R380PC is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as wel

 9.9. Size:1300K  magnachip
 mmft60r380pth.pdf 

MMFT60R380P Datasheet MMFT60R380P 600V 0.38 N-channel MOSFET Description MMFT60R380P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well a

 9.10. Size:279K  inchange semiconductor
 mmft60r115pcth.pdf 

isc N-Channel MOSFET Transistor MMFT60R115PCTH FEATURES Drain Current I = 33A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.115 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and

 9.11. Size:279K  inchange semiconductor
 mmft60r290pth.pdf 

isc N-Channel MOSFET Transistor MMFT60R290PTH FEATURES Drain Current I = 13A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.29 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s

 9.12. Size:279K  inchange semiconductor
 mmft60r195pth.pdf 

isc N-Channel MOSFET Transistor MMFT60R195PTH FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.195 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and

 9.13. Size:279K  inchange semiconductor
 mmft60r290pcth.pdf 

isc N-Channel MOSFET Transistor MMFT60R290PCTH FEATURES Drain Current I = 13A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.29 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and

 9.14. Size:279K  inchange semiconductor
 mmft60r195pcth.pdf 

isc N-Channel MOSFET Transistor MMFT60R195PCTH FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.195 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and