MMIS70H900QTH Specs and Replacement

Type Designator: MMIS70H900QTH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 19 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO-251

MMIS70H900QTH substitution

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MMIS70H900QTH datasheet

 ..1. Size:1096K  magnachip
mmis70h900qth.pdf pdf_icon

MMIS70H900QTH

MMIS70H900Q Datasheet MMIS70H900Q 700V 1.4 N-channel MOSFET Description MMIS70H900Q is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as... See More ⇒

 8.1. Size:1172K  magnachip
mmis70r900pth.pdf pdf_icon

MMIS70H900QTH

MMIS70R900P Datasheet MMIS70R900P 700V 0.9 N-channel MOSFET Description MMIS70R900P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as... See More ⇒

 8.2. Size:1293K  magnachip
mmis70r1k4pth.pdf pdf_icon

MMIS70H900QTH

MMIS70R1K4P Datasheet MMIS70R1K4P 700V 1.4 N-channel MOSFET Description MMIS70R1K4P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as... See More ⇒

 8.3. Size:214K  inchange semiconductor
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MMIS70H900QTH

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor MMIS70R900PTH FEATURES With TO-251(IPAK) packaging Low power loss High speed switching Low on-resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications DC DC Converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a S... See More ⇒

Detailed specifications: MMFT60R380PCTH, MMFT60R380PTH, MMFT65R195PTH, MMFT70R380PTH, MMFTP84, MMIS60R580PTH, MMIS60R750PTH, MMIS60R900PTH, IRFZ44, MMIS70R1K4PTH, MMIS70R900PTH, MMIX1F132N50P3, MMIX1F160N30T, MMIX1F180N25T, MMIX1F210N30P3, MMIX1F230N20T, MMIX1F360N15T2

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