MMIS70H900QTH. Аналоги и основные параметры

Наименование производителя: MMIS70H900QTH

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 28 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 700 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.2 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 19 ns

Cossⓘ - Выходная емкость: 19 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.4 Ohm

Тип корпуса: TO-251

Аналог (замена) для MMIS70H900QTH

- подборⓘ MOSFET транзистора по параметрам

 

MMIS70H900QTH даташит

 ..1. Size:1096K  magnachip
 mmis70h900qth.pdf pdf_icon

MMIS70H900QTH

MMIS70H900Q Datasheet MMIS70H900Q 700V 1.4 N-channel MOSFET Description MMIS70H900Q is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as

 8.1. Size:1172K  magnachip
 mmis70r900pth.pdf pdf_icon

MMIS70H900QTH

MMIS70R900P Datasheet MMIS70R900P 700V 0.9 N-channel MOSFET Description MMIS70R900P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as

 8.2. Size:1293K  magnachip
 mmis70r1k4pth.pdf pdf_icon

MMIS70H900QTH

MMIS70R1K4P Datasheet MMIS70R1K4P 700V 1.4 N-channel MOSFET Description MMIS70R1K4P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as

 8.3. Size:214K  inchange semiconductor
 mmis70r900pth.pdf pdf_icon

MMIS70H900QTH

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor MMIS70R900PTH FEATURES With TO-251(IPAK) packaging Low power loss High speed switching Low on-resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications DC DC Converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

ПОКАЗАТЬ ЕЩЁ

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