Справочник MOSFET. MMIS70H900QTH

 

MMIS70H900QTH Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: MMIS70H900QTH
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 28 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 3.2 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 19 ns
   Cossⓘ - Выходная емкость: 19 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.4 Ohm
   Тип корпуса: TO-251
 

 Аналог (замена) для MMIS70H900QTH

   - подбор ⓘ MOSFET транзистора по параметрам

 

MMIS70H900QTH Datasheet (PDF)

 ..1. Size:1096K  magnachip
 mmis70h900qth.pdf pdf_icon

MMIS70H900QTH

MMIS70H900Q Datasheet MMIS70H900Q 700V 1.4 N-channel MOSFET Description MMIS70H900Q is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as

 8.1. Size:1172K  magnachip
 mmis70r900pth.pdf pdf_icon

MMIS70H900QTH

MMIS70R900P Datasheet MMIS70R900P 700V 0.9 N-channel MOSFET Description MMIS70R900P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as

 8.2. Size:1293K  magnachip
 mmis70r1k4pth.pdf pdf_icon

MMIS70H900QTH

MMIS70R1K4P Datasheet MMIS70R1K4P 700V 1.4 N-channel MOSFET Description MMIS70R1K4P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as

 8.3. Size:214K  inchange semiconductor
 mmis70r900pth.pdf pdf_icon

MMIS70H900QTH

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor MMIS70R900PTHFEATURESWith TO-251(IPAK) packagingLow power lossHigh speed switchingLow on-resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsDC DC ConvertersABSOLUTE MAXIMUM RATINGS(T =25)aS

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... MMFT60R380PCTH , MMFT60R380PTH , MMFT65R195PTH , MMFT70R380PTH , MMFTP84 , MMIS60R580PTH , MMIS60R750PTH , MMIS60R900PTH , IRFZ44 , MMIS70R1K4PTH , MMIS70R900PTH , MMIX1F132N50P3 , MMIX1F160N30T , MMIX1F180N25T , MMIX1F210N30P3 , MMIX1F230N20T , MMIX1F360N15T2 .

 

 
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