MMIX1F132N50P3 Specs and Replacement

Type Designator: MMIX1F132N50P3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 520 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 63 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 1750 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm

Package: ISOLATED TAB

MMIX1F132N50P3 substitution

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MMIX1F132N50P3 datasheet

 ..1. Size:182K  ixys
 mmix1f132n50p3.pdf pdf_icon

MMIX1F132N50P3

Advance Technical Information Polar3TM HiPerFETTM VDSS = 500V MMIX1F132N50P3 Power MOSFET ID25 = 63A RDS(on) 43m (Electrically Isolated Tab) trr 250ns D N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Rectifier S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V Isolated Tab VDGR TJ = ... See More ⇒

 7.1. Size:183K  ixys
 mmix1f180n25t.pdf pdf_icon

MMIX1F132N50P3

Advance Technical Information GigaMOSTM TrenchTM VDSS = 250V MMIX1F180N25T HiperFETTM ID25 = 130A Power MOSFET RDS(on) 13m trr 200ns (Electrically Isolated Tab) D N-Channel Enhancement Mode G Avalanche Rated Fast Intrinsic Diode S Symbol Test Conditions Maximum Ratings Isolated Tab VDSS TJ = 25 C to 150 C 250 V V... See More ⇒

 7.2. Size:183K  ixys
 mmix1f160n30t.pdf pdf_icon

MMIX1F132N50P3

Advance Technical Information GigaMOSTM TrenchTM VDSS = 300V MMIX1F160N30T HiperFETTM ID25 = 102A Power MOSFET RDS(on) 20m trr 200ns (Electrically Isolated Tab) D N-Channel Enhancement Mode G Avalanche Rated Fast Intrinsic Diode S Symbol Test Conditions Maximum Ratings Isolated Tab VDSS TJ = 25 C to 150 C 300 V V... See More ⇒

 8.1. Size:225K  ixys
 mmix1f420n10t.pdf pdf_icon

MMIX1F132N50P3

Advance Technical Information GigaMOSTM TrenchTM VDSS = 100V MMIX1F420N10T HiperFETTM ID25 = 334A Power MOSFET RDS(on) 2.6m Trr 140ns (Electrically Isolated Tab) D N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Diode S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 100 V Isolated Tab ... See More ⇒

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Detailed specifications: MMFT70R380PTH, MMFTP84, MMIS60R580PTH, MMIS60R750PTH, MMIS60R900PTH, MMIS70H900QTH, MMIS70R1K4PTH, MMIS70R900PTH, IRLZ44N, MMIX1F160N30T, MMIX1F180N25T, MMIX1F210N30P3, MMIX1F230N20T, MMIX1F360N15T2, MMIX1F40N110P, MMIX1F420N10T, MMIX1F44N100Q3

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.