All MOSFET. MMIX1F132N50P3 Datasheet

 

MMIX1F132N50P3 Datasheet and Replacement


   Type Designator: MMIX1F132N50P3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 520 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 63 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 1750 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm
   Package: ISOLATED TAB
 

 MMIX1F132N50P3 substitution

   - MOSFET ⓘ Cross-Reference Search

 

MMIX1F132N50P3 Datasheet (PDF)

 ..1. Size:182K  ixys
mmix1f132n50p3.pdf pdf_icon

MMIX1F132N50P3

Advance Technical InformationPolar3TM HiPerFETTM VDSS = 500VMMIX1F132N50P3Power MOSFET ID25 = 63A RDS(on) 43m (Electrically Isolated Tab) trr 250nsDN-Channel Enhancement ModeAvalanche RatedGFast Intrinsic RectifierSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 V Isolated TabVDGR TJ =

 7.1. Size:183K  ixys
mmix1f180n25t.pdf pdf_icon

MMIX1F132N50P3

Advance Technical InformationGigaMOSTM TrenchTMVDSS = 250VMMIX1F180N25THiperFETTMID25 = 130A Power MOSFET RDS(on) 13m trr 200ns(Electrically Isolated Tab)DN-Channel Enhancement ModeGAvalanche RatedFast Intrinsic DiodeSSymbol Test Conditions Maximum Ratings Isolated TabVDSS TJ = 25C to 150C 250 VV

 7.2. Size:183K  ixys
mmix1f160n30t.pdf pdf_icon

MMIX1F132N50P3

Advance Technical InformationGigaMOSTM TrenchTMVDSS = 300VMMIX1F160N30THiperFETTMID25 = 102A Power MOSFET RDS(on) 20m trr 200ns(Electrically Isolated Tab)DN-Channel Enhancement ModeGAvalanche RatedFast Intrinsic DiodeSSymbol Test Conditions Maximum Ratings Isolated TabVDSS TJ = 25C to 150C 300 VV

 8.1. Size:225K  ixys
mmix1f420n10t.pdf pdf_icon

MMIX1F132N50P3

Advance Technical InformationGigaMOSTM TrenchTMVDSS = 100VMMIX1F420N10THiperFETTMID25 = 334A Power MOSFET RDS(on) 2.6m Trr 140ns(Electrically Isolated Tab)DN-Channel Enhancement ModeAvalanche RatedGFast Intrinsic DiodeSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 100 V Isolated Tab

Datasheet: MMFT70R380PTH , MMFTP84 , MMIS60R580PTH , MMIS60R750PTH , MMIS60R900PTH , MMIS70H900QTH , MMIS70R1K4PTH , MMIS70R900PTH , IRFP260N , MMIX1F160N30T , MMIX1F180N25T , MMIX1F210N30P3 , MMIX1F230N20T , MMIX1F360N15T2 , MMIX1F40N110P , MMIX1F420N10T , MMIX1F44N100Q3 .

History: 2SK1446 | BUK9624-55A | SVF2N60CNF | PHD82NQ03LT

Keywords - MMIX1F132N50P3 MOSFET datasheet

 MMIX1F132N50P3 cross reference
 MMIX1F132N50P3 equivalent finder
 MMIX1F132N50P3 lookup
 MMIX1F132N50P3 substitution
 MMIX1F132N50P3 replacement

 

 
Back to Top

 


 
.